The Renesas Electronics Corporation, the premier supplier of advanced Semiconductor solutions has come up with the six new products in the 8th – generation G8H series of IGBT (Insulated Gate Bipolar Transistor) which helps to reduce the conversion losses in power conditioners and inverter applications in UPS. The 6 new product versions are rated at 650 V (40 A, 50 A and 75 A) and at 1250 V (25 A, 40A and 75 A). Renesas used the TO – 247 plus package for 1250V IGBT along with the built-in diode which provides a greater flexibility in the circuit configuration for the system manufacturers.
Renesas Electronics designed the 8th generation IGBTs by using an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to the previous IGBT Generations. It also reduces the conduction losses by decreasing the saturation voltage. The performance index of this device has improved up to 30% compared to 7th generation IGBT.
Applications
Following are the few applications of IGBT,
Solar power generation system:
Here in this system, there is some power loss in the generation process of Direct Current (DC). Since the majority of this power loss occurs within the power devices used, reducing IGBT power loss has a positive effect on the power generation performance of the user system.
UPS:
UPS systems which are used in server rooms or data centers, sometimes creates a steady power loss. This power loss can be reduced by using this device.
Key features of the new 8th – generation IGBTs
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Faster switching, industry – leading ultra – low power loss features ideal for inverter circuits.
Renesas utilized its long-standing low-loss IGBT design expertise to develop an exclusive trench gate configuration. The new IGBTs can achieve both fast switching performance and low saturation voltage (Vce (sat)) features by using the state-of-the-art process technology.
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Eliminated external gate resistors thanks to low switching noise
By eliminating the gate resistance in the 8th-generation IGBTs, gate noise during the switching has been reduced. This contributes to a reduced component count and a more compact design.
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TO-247 package with excellent heat dissipation; operation guaranteed at high temperatures up to 175°C
The underside of the TO-247 package is formed from metal. For superior heat dissipation performance, the heat generated by IGBT power loss is conveyed directly to the package exterior. This helps to improve the performance and reliability of user systems.
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Industry’s-First 1,250 V IGBT with built-in diode in a TO-247 plus discrete-package version available for 75 A current band rated at 100C
By using discrete-package devices in the 75 A current band rated at 100C, system manufacturers can utilize increased circuit configuration flexibility and can also easily increase the power capacity of their systems.
Availability
8th generation IGBTs samples are available now. Based on the inverter circuit type used and required output capacity, the system manufacturers can select the product version. In the September 2016, huge production of this device will begin and is expected to reach 600, 000 units per month by March 2017.
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