Alliance Memory recently announced expansion of one of its most popular high speed CMOS DDRs and lower voltage DDR3L SDRAMs with upgraded 512Mb x8 and x16 instruments in the 78-ball and the 96-ball FBGA packs respectively. These new SDRAMs feature a DDR architecture that allows these to offer extremely high-paced transfer rate of 1600Mbps and clock rate of 800MHz. The Vice President of Marketing at Alliance Memory states that, “Very few suppliers offer 512Mb DDR3 and DDR3L SDRAMs, so we are excited to add them to our broad lineup, which also includes hard-to-find 8Gb devices. Furthermore, our new DDR3 and DDR3L SDRAMs are offered in the same FBGA packages as devices with densities from 512Mb to 8Gb, allowing our customers to easily switch if they require less memory.”
These devices were released with minimal die shrinks, with these add-ons these devices would be able to pin-for-pin-compatible drop-in substitutions for several similar solutions that are used in embedded systems, computers, consumer electronics, industrial metering applications, computers, notebook, as well as wireless base stations. It completely eliminates the requirement for expensive redesigning and part requalification. The 512Mb DDR3 SDRAMs can easily work from a +1.5V power supply while the DDR3L SDRAMs can work from a single +1.35V power supply with a compatibility to 1.5V. The JEDEC-compliant devices can be availed in industrial and commercial ranges of temperatures. The DDR3L and DDR3 SDRAMs can provide backup for interleaved and sequential burst types with write and read burst lengths of 4 or 8. An auto pre-charge function offers a highly self-timed row pre-charge that begins from the end of burst sequence. The simple-to-use refresh functionalities also include auto- or self-refresh.
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