Alliance Memory has recently introduced a new high-speed CMOS mobile low-power DDR3 (LPDDR3) SDRAM, which is designed to extend battery life in compact portable devices. It carries a low voltage operation of 1.2V/1.8V and a number of power-saving features. Besides, the 16Gb AS4C512M32MD3 is offered in the 11.0mm by 11.5mm 178-ball FBGA package.
With the introduction of every new product generation, designers of mobile devices like smartphones, tablets, and virtual and augmented reality (VR and AR) headsets are compelled to come up with more functionality in less space with less power usage. In order to meet the same, the newly released LPDDR3 device is equipped with auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, its partial array self-refresh (PASR) refreshes only the critical data, thereby reducing power. It also makes use of a deep power down (DPD) mode that renders an ultra-low power state in case data retention isn’t required.
“Reducing IC power consumption can directly increase battery life in portable devices, so the applications for LPDDR3 SDRAMs in the consumer and mobile communication markets continue to grow,” said David Bagby, president and CEO of Alliance Memory. “At the same time, the number of suppliers for these devices is decreasing. Alliance Memory is offering designers a new alternative and shorter lead times for the low power consumption they require. Devices such as our new 16Gb AS4C512M32MD3 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications.”
Moving on to the specifications, the AS4C512M32MD3 has been manufactured through a 20nm process and is internally configured as 8 banks x 32 Mbit x 32. The device offers high-speed operation with a clock frequency of 667MHz and data rate of 1333Mbps, and it features an extended commercial temperature range of -25°C to +85°C.
The LPDDR3 SDRAM renders fully synchronous operation and programmable read or write burst lengths of 4, 8, or 16. There is also an auto pre-charge function that provides a self-timed row pre-charge initiated at the end of the burst sequence. Besides, Easy-to-use refresh functions like auto- or self-refresh are also available. The RoHS-compliant device is lead (Pb)- and halogen-free.
The samples and production quantities of the new LPDDR3 are available with lead times of four to six weeks for production quantities.
Alliance Memory Inc.
Alliance Memory is a worldwide provider of critical and hard-to-find DRAM and SRAM memory ICs for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The product range encompasses DRAMs and SRAMs with commercial, industrial, and automotive operating temperature ranges and densities from 64Kb to 8Gb.
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