Vishay Intertechnology, Inc. has launched a new 80 V TrenchFET Gen IV n-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK SO-8 single unit.
Designed to save energy by increasing the efficiency of power conversion topologies and switching circuitry, the Vishay Siliconix SiR680ADP offers best in class on-resistance times gate charge — a key figure of merit (FOM) for MOSFET’s used in power conversion applications — of 129 mΩ*nC.
The device released combines on-resistance down to 2.35 mΩ typical at 10 V with ultra-low gate charge of 55 nC and COSS of 614 pF. These specifications are fine-tuned to reduce the power losses from switching, channel conduction, and diode conduction, resulting in increased efficiency. The MOSFET’s on-resistance times gate charge FOM is 12.2% lower than the closest competing product and 22.5 % lower than the previous-generation device, making it the most efficient solution available for typical 48 V input to 12 V output DC/DC converters.
The SiR680ADP will serve as a building block in a wide variety of DC/DC and AC/DC conversion applications such as synchronous rectification, primary-side switching, buck-boost converters, resonant tank switching converters, and the OR-ing function in systems such as telecom and data center server power supplies; solar micro-inverters; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.
The MOSFET is 100 % RG– and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities of the SiR680ADP are available now, with lead times of 12 weeks.
New 30 V p-channel MOSFET
Vishay Intertechnology also recently launched a new 30 V p-channel TrenchFET Gen IV power MOSFET that allows industry-low on-resistance of 3.5 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally improved PowerPAK 1212-8S package, in extension to best in class on-resistance times gate charge — a significant figure of merit (FOM) for MOSFETs used in switching applications — of 172 mΩ*nC.
Purpose-built to enhance power density, the space-saving Vishay Siliconix SiSS05DN is 65% smaller than machines with similar on-resistance in 6 mm by 5 mm packages.
This on-resistance of the MOSFET delivered is 26% lower than the previous-generation solution and 35% more inexpensive than the next best product on the market, and its FOM is 15% more moderate than the closest competing device. These industry-best benefits result in reduced conduction and switching needs to save energy and increase battery run times in portable electronics while reducing voltage drops across the power path to prevent spurious triggering.
The device’s compact form factor is more comfortable to apply into designs with limited PCB real estate. With its industry-standard footprint area, the SiSS05DN provides a drop-in upgrade to existing parts in applications employing 5 V to 20 V input rails. The MOSFET is perfect for adapter and load switches, reverse polarity protection, and motor drive command in battery-powered devices, battery chargers, computers, consumer electronics, telecom equipment, and more.
The system is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free. Specimens and production quantities of the SiSS05DN are also available, with lead terms of 12 weeks subject to market conditions.