Graphene With High Resistance To Ozonation Developed By Scientists

A scientists working at the National Research Nuclear University (MEPhl) along with a group of foreign of universities recently reported development of a new kind of industrial technology that can purify graphene and play a vital role in its stability under effect of highly aggressive oxygen free radicals. This discovery is expected to play an important role in development of nanoelectronics. Basically, graphene is a crystalline carbon film that has thickness of one atom. It’s unique electronic, transparency, and conductivity properties that make it a promising material for nanoelectronics that are in high demand.

The manufacturing process of multiple nanoelectronic devices includes application of polymeric covering over graphene and its peeling off. The remaining extracts of this coating adulterate the graphene atoms bringing down the mobility of its charge carriers. There are a few different methods that can eradicate the polymer residues but have an adverse effect over quality of graphene. One of the most common methods used in this purification is Ozone that is capable of removing residues of polymer due to its high reactivity. But Ozone is known for influencing the characteristics of graphene atoms bringing down its overall quality. The team working on this project was successful in extracting graphene with high stability against ozonation through high-temperature silicon carbide sublimation. The resultant graphene stays in touch with ozone layer for at least ten minutes, normal graphene, on the other hand loses its properties within just 3-4 minutes exposure.

Konstantin Katin, an assistant professor from Department of Condensed Matter Physics here says, “It was found that the usual ‘rough’ graphene is more vulnerable because of the presence of convex areas; these areas show high reactivity to the formation of epoxy groups, which destroy its integrity.” Another team member, an assistant professor from the same department, Mikhail Maslov further adds, “The results show that the technological process for the production of industrial graphene with improved characteristics can involve the nanofabrication of graphene on the basis of silicon carbide with its subsequent ozonation. Ozonation itself is an effective way of clearing graphene obtained in any way. The only limitation on the purification techniques has to do with the possible roughness of the graphene sheet—it should be practically perfectly smooth.”