Infineon adds SiC-based power modules with .XT interconnection and 3 kV isolation

Infineon has released the EasyPACK C, the latest addition to its EasyPACK family of power modules. The first products in this series use 1200V CoolSiC MOSFET G2 devices combined with Infineon’s.XT interconnection technology. These silicon carbide (SiC) modules are designed for high-efficiency, long-lifetime operation in industrial systems such as fast DC electric vehicle charging, megawatt charging, energy storage, and uninterruptible power supplies.

The CoolSiC MOSFET G2 technology enables higher power density and lower conduction losses compared with earlier generations. The devices feature an approximately 25% reduction in RDS(on) and are engineered to achieve improved thermal performance and longer operational lifetime. The EasyPACK C package enhances power density and layout flexibility, allowing for future high-voltage designs.

The modules are designed to tolerate overload switching conditions up to a junction temperature (Tvj(over)) of 200°C. They use new PressFIT pins that double current capacity, reduce PCB temperatures, and simplify assembly. Additional material improvements, including new plastic housing and silicone gel insulation, support continuous operation up to 175°C (Tvj(op)). The modules also provide electrical isolation of 3 kV AC for one minute.

EasyPACK C modules are available in multiple topologies, including 3-level and H-bridge configurations, with or without thermal interface material. These design options allow integration into various power conversion architectures across industrial applications.

The first EasyPACK C modules with CoolSiC MOSFET G2 technology are now available.