Infineon Technologies is expanding its 7th generation TRENCHSTOP IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature an EC7 co-packed diode with an advanced emitter-controlled design and high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions.

Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, improved efficiency and higher power density.

As a result, the device is ideal for various applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.

In a discrete package, the 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A. The portfolio includes variants from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance.

For improved performance, the TO-247 4-pin packages (standard: IKZA, Plus: IKY) are particularly well suited, as they reduce switching losses and offer additional benefits — such as lower voltage overshoot, minimized conduction losses, and the lowest reverse current loss.

With these features, the TRENCHSTOP IGBT 7 H7 simplifies the design and minimizes the need to connect devices in parallel.

Additionally, the 650 V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications. Designed to meet the demand for green and efficient power applications, the IGBT offers significant improvements over the previous generations.

The TRENCHSTOP IGBT 7 H7 is the ideal complement for the NPC1 topology often used in applications, including solar and ESS.

---

Filed Under: Components, News, Power Management
Tagged With: igbt, infineontechnologies, insulatedgatebipolartransistor, powermanagent, transistor, trenchstop
 

---

---

---