Infineon unveils transistor devices for digitalization and decarbonization

Infineon Technologies AG announces two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. These two product families are manufactured on high-performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria). With this, Infineon expands its CoolGaN advantages and capacity to ensure a robust supply chain in the GaN devices market, which is estimated to grow with an average annual growth rate (CAGR) of 46 percent over the next five years according to Yole Group.

The new 650 V G5 family addresses applications in consumer, data center, industrial and solar. These products are the next generation of GIT-based high voltage products from Infineon. The second new family manufactured on the 8-inch process is the medium voltage G3 devices which include CoolGaN Transistor voltage classes 60 V, 80 V, 100 V and 120 V; and 40 V bidirectional switch (BDS) devices. The medium voltage G3 products are targeted at motor drive, telecom, data center, solar and consumer applications.

The CoolGaN 650 V G5 will be available in Q4 2024 and the medium voltage CoolGaN G3 will be available in Q3 2024. Samples are available now.