A novel semiconducting material, which holds thickness equivalent to just three atomic layers, has developed with more malleable and exotic electronic properties as compared to the conventional semiconductors.
Electrons have varying energy levels ranging from high energy levels to low levels, similar to a ball rolling down from a hill. A Dell in the electronic structure networks with and is regulatory manipulated by circularly polarized laser light. The laser tends the dell with initial equal energies to have little bit distinct energies. It is the first time that a laser has bifurcated energy dells in an atomically lean semi-conductor – tungsten disulfide. This semiconductor could result in advanced electronics grounded on the energy valley instead of traditional electronics based on charge accumulation and flows.
The novel semiconductor consists properties that are inherited from electrons that prefer lesser energy levels at the lowest of electronic energy ‘valleys.’ Now the depth of the valley can be moved optically and with high speed with sculpted laser pulses.
Layered materials where it is a constraint for the electrons to two dimensions can be structured into new electronic structures with exclusive optical and electronic properties. Optical manipulation of electrons can result in novel modes of converting the energy and computational devices like electronics based on varying energy levels states instead of traditional electronics based on accumulation and charge flow.
A novel ultra-thin semiconducting material – WS2 or tungsten disulfide contains three atomic layers in an ‘atomic sandwich’ pattern with a heavy metal tungsten layer of an atom between lighter element sulfur atom coatings. The material is quasi two-dimensional with a thickness of three atomic coating and showcases an exceptional electronic structure with slight differences by the direction about the repeating atomic bonds in the plain layer. The differences generate two distinct but alike valleys in the electronic structure, where electrons can gather with distinct directions, but with related energy gaps and levels that are equal.
Adding a particular type of laser beam, where the polarization direction, the course of interacting electric forces revolves as the light propagates, generates a novel type of electron energy structure that can be searched and operated. The structural landscape of the electron, which instigated with two analogous dells, can also be crafted to have distinct valleys with varying energy depths.
The depth of the valley can now be employed with light to convert information like ones and zeroes for traditional data. Additionally, altering the energy of the dells with light enables for effective manipulation without the requirement for contact with intricate electrodes as in traditional electronics.
As a whole, it is an exceptional research work that could result in lucrative gains to various departments. The research work was sustained by the U.S. Department of Energy, Office of Basic Energy Sciences, Office of Science, the National Science Foundation and the Ministry of Technology and Science of the Republic of China. Awaited is to see how these manipulations will generate lucrative benefits to the future period.
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