Littelfuse driver achieves less than 1 µA standby current for energy-efficient designs

Littelfuse, Inc. has released the IXD0579M high-speed gate driver IC designed for driving N-channel MOSFETs or IGBTs in half-bridge configurations. The device operates across a 6.5 V to 18 V supply range and integrates both a bootstrap diode and a series current limit resistor into a single 3×3 mm² TDFN-10 package, reducing component count and simplifying PCB layout.

The IXD0579M delivers 1.5 A source and 2.5 A sink output drive current while featuring under-voltage lockout (UVLO) protection. The device interfaces directly with TTL and CMOS logic levels down to 3.3 V and includes cross-conduction protection to prevent simultaneous high-side and low-side activation. The IC draws less than 1 µA in standby mode and functions across an operating temperature range of −40 °C to +125 °C.

This gate driver serves as a direct drop-in replacement for industry-standard gate driver ICs in the market. It represents the eleventh high-side/low-side driver in the Littelfuse portfolio and the first to incorporate both an integrated bootstrap diode and current limit resistor.

The IXD0579M targets high-frequency switching applications including brushless DC motor drives, battery-powered hand tools, DC-DC converters, power supplies, and general industrial equipment. Its compact footprint suits space-constrained designs requiring efficient power stage implementation.

The device is currently available in a TDFN-10 package in tape and reel format with 3,000 units per reel.