Littelfuse Inc, one of the global level players ni circuit protection, announced four latest series of 1200V SiC (silicon carbide) Schottky Diodes. These new diodes belong its GEN2 product family that hit markets earlier in 2017. The three series known as LSIC2SD120A20, LSIC2SD120A15, and LSIC2SD120A08 are capable of providing current ratings of 20A, 15A, and 8A respectively.
All the three are being offered in TO-220-2L package. Along with it, the LSIC2SD120C08 Series is providing a current rating of 8A in TO-252-2L packaging. The GEN2 SiC Schottky Diodes are based on merged p-n Schottky (MPS) device architecture which allows them to enhance the surge capability and bring down the leakage current. These diodes will also be replacing the ideal silicon bipolar power diodes paving a way to reduce circuit losses to quite an extent. This, in return, would allow the diodes to accommodate larger surge currents without any thermal runaway and be operational even at higher junction temperatures such as 175 degrees centigrade. All these modification will ultimately improve the robustness and efficiency of electronics systems.
As for application, these diodes will be implemented in several tasks like high-frequency output rectification, free-wheeling diodes in the inverter stages, boost or buck stages in DC-DC converters, and active PFC (Power Factor Correction). These diodes will be sold across several markets including those of cooking devices, EV charging stations, plasma cutting and welding, motor drives and so forth. The Global Product Marketing Manager, Power Semiconductors at Littelfuse, Michael Ketterer says, “The latest GEN2 SiC Schottky Diodes are ideal solutions for circuit designers who need to reduce switching losses, accommodate large surge currents without thermal runaway, and operate at higher junction temperatures. They expand the component options available to circuit designers striving to improve the efficiency, reliability, and thermal management of the latest power electronics systems.”
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