Microchip expands its gallium-nitride RF power portfolio

Microchip Technology Inc. recently announced a significant expansion of its gallium-nitride (GaN), radio-frequency (RF). power-device portfolio with new MMICs and discrete transistors that cover frequencies up to 20 gigahertz (GHz).

The devices combine high power-added efficiency (PAE) and high linearity to deliver new levels of performance in applications — ranging from 5G to electronic warfare, satellite communications, commercial and defense radar systems, and test equipment.

Like all Microchip GaN RF power products, the devices are fabricated using GaN-on-silicon carbide technology that provides an ideal combination of high-power density, yield, high-voltage operation, and a lifespan of more than one-million hours at a 255^o C junction temperature.

They include GaN MMICs covering 2 to 18 GHz, 12 to 20 GHz, and 12 to 20 GHz with 3 dB Compression Point (P₃dB) RF output power up to 20 W and efficiency up to 25 percent. Additionally, they offer bare die and packaged GaN MMIC amplifiers, for the S and X-band with up to 60% PAE, and discrete high-electron mobility transistor (HEMT) devices covering DC to 14 GHz with P₃dB RF output power up to 100W and maximum efficiency of 70 percent.

“Microchip continues to invest in our family of GaN RF products to support every application at all frequencies from microwave through millimeter wavelengths, and our product portfolio includes more than 50 devices, from low-power levels to 2.2 kW,” said Leon Gross, VP of Microchip’s discrete products business unit. “Together, the products announced today span 2 to 20 GHz and are designed to meet the linearity and efficiency challenges posed by the higher-order modulation techniques employed in 5G and other wireless networks, as well as the unique needs of satellite communications and defense applications.”

Microchip’s portfolio of RF semiconductors in addition to GaN devices ranges from gallium-arsenide (GaAs) RF amplifiers and modules to low-noise amplifiers, front-end modules (RFFEs), varactor, Schottky, PIN diodes, RF switches, and voltage variable attenuators.

In addition, the company provides high-performance surface acoustic wave (SAW) sensors and microelectromechanical systems (MEMS) oscillators and highly integrated modules that combine microcontrollers (MCUs) with RF transceivers (Wi-Fi MCUs) that support major short-range wireless communications protocols from Bluetooth and Wi-Fi to LoRa.

Microchip provides board design support to help with design-ins, as do the company’s distribution partners. The company also provides compact models for the new GaN products that let customers more easily model performance and expedite the design of the power amplifiers in their systems.