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Microchip unveils industry’s lowest on-resistance 3.3 kV silicon-carbide power devices

By Michelle Froese

System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives, and energy infrastructure solutions require high-voltage switching technology to increase efficiency, reduce system size and weight.

Microchip Technology has announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current-rated SiC SBDs available in the market, enabling designers to take advantage of ruggedness, reliability, and performance.

With the expansion of Microchip’s SiC portfolio, designers are equipped with the tools to develop smaller, lighter, and more efficient solutions for electrified transportation, renewable energy, aerospace, and industrial applications.

Many silicon-based designs have reached their limits in efficiency improvements, system cost reduction, and application innovation. Although high-voltage SiC provides a proven alternative to achieve these results, the availability of 3.3 kV SiC power devices was limited until now.

Microchip’s 3.3 kV MOSFETs and SBDs join the company’s comprehensive portfolio of SiC solutions that include 700V, 1200V, and 1700V die, discretes, modules, and digital gate drivers.

Microchip’s 3.3 kV SiC power devices include MOSFETs with the industry’s lowest RDS(on) of 25 mOhm and SBDs with the industry’s highest current rating of 90 amps. Both MOSFETs and SBDs are available in die or package form. These new levels of performance enable designers to simplify their design, create higher-power systems, and use fewer paralleled components for smaller, lighter, and more efficient power solutions.

“We focus on developments that provide our customers the ability to quickly innovate systems and move their end-products into a competitive advantage position faster,” said Leon Gross, VP of Microchip’s discrete product business unit. “Our new family of 3.3 kV SiC power products allows customers to move to high-voltage SiC with ease, speed, and confidence and benefit from the many advantages of this exciting technology over silicon-based designs.”

Microchip has released hundreds of SiC power devices and solutions to production over the last three years, ensuring designers can find the right voltage, current, and package fit for their application requirements. All Microchip SiC MOSFETs and SBDs are designed with customer confidence in mind, featuring ruggedness and reliability.

The company’s devices are backed by its customer-driven obsolescence practice, which ensures devices will continue to be produced for as long as customers need them.

Customers can combine Microchip SiC products with the company’s other devices including 8, 16, and 32-bit microcontrollers (MCUs), power-management devices, analog sensors, touch, gesture controllers, and wireless connectivity solutions to create complete system solutions at a lower overall system cost.

The expanded SiC portfolio is supported by a range of SiC SPICE models compatible with Microchip’s MPLAB Mindi analog simulator modules and driver-board reference designs. The Intelligent Configuration Tool (ICT) enables designers to model efficient SiC gate driver settings for Microchip’s AgileSwitch family of configurable digital gate drivers.


Filed Under: Components, News, Semiconductors
Tagged With: gatedrivers, microchip, microcontrollers, mosfets, powermanagement, semiconductors, siliconcarbide
 

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