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Littelfuse Releases 650V SiC Schottky Diodes With New Current Ratings and Package Sizes From 6A-40A

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Shreepanjali Mod

Littelfuse Inc. recently added two new products to its expanding line of  Schottky Diodes. The product line has 650V, AEC-Q101- certified SiC (Silicon Carbide) Schottky Diodes. Both these series will help power electronics system designers with lots of performance benefits over the customary silicon-based devices.

Fig. 1: New Schottky Devices By Littelfuse 

The list of benefits is a long one but the major ones includes maximum operating junction temperature of 175 degree centigrade, high surge capability, negligible reverse recovery current, and others. These features make these diodes perfect for applications demanding better efficiency, thermal management, and more reliability. The LSIC2SD065DxxA Series SiC Schottky Diodes can be availed with current ratings of 16A, 10A, and 6A inside a TO-264-2L packaging. While the LSIC2SD065ExxCCA Series SiC Schottky Diodes are being offered with 40A, 20A, 16A, and 12A current ratings in TO-247-3L packaging.

What Makes These Schottky Diodes So Special? 

The SiC Schottky Diodes are a step up from the traditional diodes because of a number of reasons. Apart from the ability to work on higher junction temperatures these present a perfect alternative solutions like silicon bipolar power diodes. These new Schottky Diodes also need smaller heat sinks and have a smaller system footprint than conventional solutions. Such benefits provide end-users with a more energy-efficient, compact system along with lower cost of ownership. 


● PFC or Power Factor Correction 

● High-frequency Output Rectification

● Free-wheeling diodes in the inverter stages.

● Boost/buck stages in DC-DC converters.

● EV (Electric Vehicle) charging stations.

In Maker’s Words

Christopher Warin, the Product Marketing Manager of Littelfuse Silicon Carbide Products, says, “These additions to our fast-growing 650V SiC Schottky Diode family allow us to offer a broader selection of current ratings and package designs suitable for a wider range of applications. These new SiC Schottky Diodes enable a variety of design optimization opportunities, including increased power density, higher efficiency and potentially lower bill of materials costs.”