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NXP’s 65V LDMOS Technology Simplifies Usability For Users

Submitted By: 

Shreepanjali Mod

NXP’s recently brought-in a 65V LDMOS that allows more efficiently integrated and highly reliable Industry 4.0 systems. The systems carrying 65V LDMOS will be capable of leveraging much better control and energy management.

Fig. 1: Image Demonstrating NXP’s 65 V LDMOS Portfolio

It can be availed from all mainstream channels. With this new addition, NXP is expanding its 65 V LDMOS profile constituted by drivers and others. This is another cherry in the cake that adds to the benefits of already released MRFX1K8H RF power transistor. The new technology favors added ease of use that paves way for much faster development time along with design reuse from the earlier LDMOS 50V solutions. There are a few other things that NXP has added to its 65V offering, the highlights are as follows:

MRFX035H: 35 W driver of earlier final-stage instruments. This one can be counted for unparalleled 50-Ohm output impedance for the most narrow board frameworks.

MRFX600H: It is a 600 W solution with a much concise footprint with unique 12.5-Ohm output impedance that perfectly fits 4:1 output transformer.

MRFX1K80N: A 1800 W solutions, it can be availed in a over-molded plastic package form of the MRFX1K80H device that allows clear 30% lesser thermal resistance.

Key Benefits

1. Rapid Development Time: The higher voltage allows output power to increase while keeping a logical output impedance. The much rapid impedance matching speeds up development time in a dramatic manner.

2. Better Power: Much higher voltage allows much better power density that assists in bringing down the number of transistors to fuse and simplify the complexity of power amplifiers and narrow down their dimensions.

3. Manageable Level of Current: Its higher voltage bring down the system current constraining the stress developed in DC power supplies. It also reduces magnetic radiations to quite an extent.

4. Much Wider Safety Margin: The 65V LDMOS technology by NXP features a breakdown voltage of 193 V that improves the reliability and a more efficient framework.

5. Design Reuse: The impedance also promises pin-to-pin compatibility with the recent 50V LDMOS transistors. This helps the RF designers reuse the pre-existing PCB (Printed Circuit Board) designs.