Vishay Intertechnology has launched the AEC-Q101-qualified, p-channel -80 V TrenchFET MOSFET, with the lowest on-resistance of any current -80 V p-channel device. The new Vishay Siliconix SQJA81EP increases power density and efficiency in automotive applications.
In the compact (5.13 by 6.15 mm) PowerPAK SO-8L single package with gullwing leads, the SQJA81EP offers on-resistance down to 17.3 mΩ maximum / 14.3 mΩ typical at 10 V.
The on-resistance of the automotive-grade MOSFET is 28 percent lower than the closest competing device in the DPAK package — while offering a 50 percent smaller footprint — and a 31 percent lower than previous-generation solutions. These values translate into energy savings by minimizing power losses from conduction, allowing for a higher output and increased power density.
Combined with the SQJA81EP’s superior gate charge down to 52 nC at 10 V, which reduces losses from gate driving, the result is best in class gate charge times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion applications.
With high temperature operation to +175° C, the device provides the ruggedness and reliability required for automotive applications such as reverse polarity protection, battery management, high-side load switching, and LED lighting. In addition, the SQJA81EP’s gullwing leads allow for increased automatic optical inspection (AOI) capabilities and provide mechanical stress relief for increased board-level reliability.
The device’s -80 V rating provides the safety margin required to support several popular input voltage rails, including 12, 24, and 48 V systems.
The MOSFET’s increased power density saves PCB space in these systems by reducing the number of components needed in parallel. Additionally, as a p-channel device, the SQJA81EP enables more simple gate drive designs that don’t require the charge pump needed by its n-channel counterparts. Lead (Pb)-free, halogen-free, and RoHS-compliant, the MOSFET is 100-percent Rg and UIS tested.
