Nexperia, a semiconductor provider, recently announced a series of half-bridge (high and low side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of the two MOSFETS is a standard building block for many automotive applications, including motor drives and DC/DC converters.
The new package provides a half-bridge solution in one device, occupying 30% lower PCB area compared to the dual MOSFETs for three-phase motor control topologies due to the removal of PCB tracks — permitting an automated optical inspection (AOI) during production. The LFPAK56D half-bridge uses existing high-volume LFPAK56D assembly processes with proven automotive reliability.
This format uses flexible leads to improve overall reliability. The internal copper clip connection between the MOSFETs simplifies PCB designs and brings a plug-and-play style solution with exceptional current handling capability of 98 A.
Typically, in a half-bridge arrangement, the PCB connection between the source of the high-side MOSFET and the drain of the low-side MOSFET can create a significant amount of parasitic inductance. However, with its internal clip connection, the LFPAK56D half-bridge package achieves 60 percent less inductance.
The new LFPAK56D half-bridge MOSFETs launched are the BUK7V4R2-40H and the BUK9V13-40H. Both use the highly robust Trench 9 automotive silicon process technology, are rated at 40 V, and are verified at twice the automotive AEC-Q101 specification in key tests. RDS(on) of the devices measures 4.2 mOhm (BUK7V4R2) and 13 mOhm (BUK9V13).
The AEC-Q101-qualified Nexperia LFPAK56D half-bridge package suits a broad range of three-phase automotive powertrain applications such as fuel and water pumps, motor control, and DC/DC power conversion, occupying 30 percent lower PCB area and 60% lower parasitic inductance for high-performance switching applications.
The new technology has already seen success with design-in and commitment from major automotive customers.
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