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Next-generation EiceDRIVER 2EDN gate driver ICs set new benchmark for form factor

By Michelle Froese

Infineon Technologies is releasing a new EiceDRIVER 2EDN product family. Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components.

Building on this expansion, the 2EDN family can now drive the power-switch device performance in applications such as servers, telecom, DC-DC converters, industrial SMPS, EV charging stations, motor control, low-speed light electric vehicles, power tools, LED lighting, and solar energy systems.

The new EiceDRIVER 2EDN family comprises of dual-channel, low-side 4 A/5 A gate-driver ICs. They target fast-power MOSFETs and wide-bandgap (WBG) switching devices. The gate drivers enable engineers to meet their design requirements in several different package sizes, ensuring safe turn-off before under-voltage lock-out (UVLO) and faster UVLO reaction for reliable operation and noise immunity.

The 14 new devices come in a broad range of packages. Besides the well-known 8-pin DSO, TSSOP, and WSON package options that allow compatibility and drop-in replacement, Infineon now offers the world’s smallest 6-pin SOT23 package (2.8 x 2.9 mm2) and TSNP package (1.1 x 1.5 mm2) variants.

The SOT23 and TSNP packages eliminate the enable (EN) signal, which frequently is not used. As a result, they offer the ideal balance for space-limited designs leading to higher power density and higher temperature cycling on board (TCoB) robustness.

Designers can choose between 4V and 8V UVLO options for instant power-switch protection under abnormal conditions. Essentially, the new products bring better UVLO filtering time, a faster wake-up from UVLO off status, and more than two times faster UVLO reaction from start-up and burst mode. Moreover, they feature high precision, accurate rail-to-rail outputs, and fast active output clamping at V DD = 1.2 V, typically clamping in just 20 ns for extra robustness.


Filed Under: Components, News, Semiconductors
Tagged With: dualchannel, eicedriver, gatedrivers, infineontechnologies, integratedcircuit, mosfets, powermanagement, semiconductors, switching
 

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