Memory

Infineon Technologies AG announced the industry’s first radiation-hardened-by-design 512 Mbit QSPI NOR Flash memory for space and extreme environment applications. The new device offers a fast quad serial peripheral interface (133 MHz) and the highest density, radiation, and single-event effects (SEE) performance available in a fully QML-qualified non-volatile memory for use with space-grade FPGAs and microprocessors.…

Renesas Electronics Corporation announced that it has delivered the industry’s first complete memory interface chipset solutions for the second-generation DDR5 Multi-Capacity Rank Dual In-Line Memory Modules (MRDIMMs). The new DDR5 MRDIMMs are needed to keep pace with the ever-increasing memory bandwidth demands of Artificial Intelligence (AI), High-Performance computing (HPC), and other data center applications. They…

Infineon Technologies AG announced the industry’s first radiation-hardened-by-design 512 Mbit QSPI NOR Flash memory for space and extreme environment applications. The new device offers a fast quad serial peripheral interface (133 MHz) and the highest density, radiation, and single-event effects (SEE) performance available in a fully QML-qualified non-volatile memory for use with space-grade FPGAs and microprocessors.…

STMicroelectronics’ Page EEPROM combines the power efficiency and durability of an EEPROM with the capacity and speed of a Flash memory, creating a hybrid memory for applications that face extreme size and power constraints. The new memories address the growing demand for storage in embedded applications, needed to support increasingly sophisticated features and run data-hungry…

Infineon Technologies AG has announced the availability of the industry’s first radiation-hardened (rad hard) 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices. These new additions to Infineon’s memory portfolio offer up to 120 years of data retention at 85 degrees Celsius, along with random access and full memory write at bus speeds.…

CUI Devices’ Interconnect Group announced the addition of memory card connectors to its connectors product portfolio. Available in a variety of SD and microSD card connectors as well as SIM, micro-SIM, nano-SIM, and smart card connector types, CUI Devices’ memory card connectors offer multiple configurations to meet the requirements of a range of memory and consumer electronic applications.…

Microchip Technology has announced the release of a new family of PIC32CK 32-bit microcontrollers (MCUs) designed to help developers comply with new cybersecurity requirements. The PIC32CK MCUs feature an integrated Hardware Security Module (HSM) subsystem and Arm Cortex-M33 core with TrustZone technology, providing a secure environment for applications. The PIC32CK SG is the first 32-bit…

Microchip Technology has expanded its Serial SRAM product line to include larger densities of up to 4 Mb and increased Serial Peripheral Interface/Serial Quad I/O Interface (SPI/SQI) speed to 143 MHz. The 2 Mb and 4 Mb devices are designed to provide a lower-cost alternative to traditional parallel SRAM products and include optional battery backup switchover circuitry in…

SMART Modular Technologies, Inc. has unveiled its latest innovation – the Zefr ZDIMM memory modules. Designed for data centers, hyperscalers, high-performance computing (HPC) platforms, and other memory-intensive environments, the ZDIMM modules offer unparalleled reliability to ensure maximum availability of computing resources. In response to the critical need for dependable memory solutions in data centers where…

Samsung Electronics, a global provider of advanced memory technology, announced the release of its latest lineup of the T-series, the Portable Solid State Drive (SSD) T9. With its stylish and portable design, the T9 is built to keep data safe while on the go, empowering users with fast transfer speeds and ample storage, and providing…

Samsung Electronics, a global provider in advanced memory technology, announced that it has developed the industry’s first Low Power Compression Attached Memory Module (LPCAMM) form factor, which is expected to transform the DRAM market for PCs and laptops — and potentially even data centers. Samsung’s groundbreaking development for its 7.5 gigabits-per-second (Gbps) LPCAMM has completed…

Samsung Electronics, a global provider in advanced memory technology, announced that it has developed the industry’s first and highest-capacity 32-gigabit (Gb) DDR5 DRAM using 12 nanometer (nm)-class process technology. This achievement comes after Samsung began mass production of its 12nm-class 16Gb DDR5 DRAM in May 2023. It solidifies Samsung’s leadership in next-generation DRAM technology and signals…

The evolving market for automotive event data recorders (EDR) is driving demand for specialized data-logging memory devices that instantly capture and reliably store critical data for decades. To this end, Infineon Technologies has introduced two new Ferroelectric RAM (F-RAM) memory devices in 1Mbit and 4Mbit densities to its EXCELON F-RAM family. The 1Mbit devices are…

Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, has introduced the third-generation DDR5 registered clock driver (RCD) and first-generation client clock driver (CKD) for emerging DDR5 DRAM servers and client systems. With these new driver ICs, Renesas continues to be the only provider to offer a complete portfolio of DDR5 memory interfaces for dual…

Infineon Technologies has launched the industry’s first LPDDR Flash memory to enable next-generation automotive E/E architectures. The Infineon SEMPER X1 LPDDR Flash offers safe, reliable, and real-time code execution critical for automotive domain and zone controllers. The new device delivers eight times the performance of current NOR Flash memories and achieves 20 times faster random…

Samsung Electronics announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology. It has also successfully completed the product evaluation for compatibility with AMD. “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, executive VP of DRAM Product…

Samsung Electronics, a provider of advanced memory technology, announced today that it has begun mass producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the industry’s highest bit density. At 1Tb, the new V-NAND also features the highest storage capacity to date, enabling larger storage space in next-generation enterprise server systems worldwide.…

Infineon Technologies has announced the commercial availability of what’s currently labeled as the industry’s highest-density serial F-RAMs — the company’s new 8- and 16-Mbit EXCELON F-RAM memories. The new EXCELON F-RAM (Ferroelectric RAM) memories address the non-volatile datalogging requirements of next-generation automotive and industrial systems to help prevent data loss in harsh operating environments. The…

Broadcom Inc. has announced the availability of the industry’s first open end-to-end networking solution optimized for Remote Direct Memory Access (RDMA) over Converged Ethernet. Hyperscaler and enterprise data-center operators can now deploy fully optimized systems that are connected by Broadcom, using open-standard RDMA. Jointly integrated by Broadcom and Arista, this end-to-end solution features Broadcom’s Ethernet…

Samsung Electronics, a global provider in advanced memory technology, announced the 990 PRO, the company’s high-performance NVMe SSD based on PCIe 4.0. Delivering lightning-fast speeds and high-power efficiency, the new SSD is optimized for graphically demanding games and other intensive tasks — including 3D rendering, 4K video editing, and data analysis. “With continuing innovations in…