Semiconductors

STMicroelectronics, a global semiconductor provider, and MACOM Technology Solutions Holdings, a supplier of semiconductor products for the telecommunications, industrial, defense, and datacenter industries, have announced the successful production of radio-frequency Gallium-Nitride-on Silicon (RF GaN-on-Si) prototypes. With this achievement, ST and MACOM will continue to work together and enhance our relationship. RF GaN-on-Silicon offers high potential for…

STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction, multi-drain, silicon-power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions. The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has…

Infineon Technologies has launched the new TRENCHSTOP 1700 V IGBT7 chip in the standard industrial package EconoDUAL 3. With this new chip technology, the EconoDUAL 3 provides currents of 900 A and 750 A, enabling an improved power range for inverters. The modules target a wide range of applications including wind, drive, and static VAR generators…

Infineon Technologies has introduced a new CoolSiC technology to its lineup: the CoolSiC MOSFET 1200 V M1H. This advanced silicon-carbide (SiC) chip will be implemented in a widely extended portfolio using the popular Easy Module family — with discrete packages using .XT interconnect technology. The M1H chip offers high flexibility and is suitable for solar…

Nexperia, an expert in essential semiconductors, has released new, enhanced electrothermal models for its MOSFET devices. Semiconductor manufacturers commonly provide simulation models for their MOSFETs. But these typically only include a limited number of device parameters that have been modeled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete…

System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives, and energy infrastructure solutions require high-voltage switching technology to increase efficiency, reduce system size and weight. Microchip Technology has announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC…

Infineon Technologies is releasing a new EiceDRIVER 2EDN product family. Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components. Building on this expansion, the 2EDN family can now drive the power-switch device performance in applications…

Megatrends including digitalization, urbanization, and electromobility all equate to an increase in power consumption. At the same time, energy efficiency is more important than ever. Infineon Technologies is responding to these megatrends and related demands by offering a new family of CoolSiC 650 V silicon-carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top performance.…

Committed to setting new technology standards in discrete power-MOSFET technologies, Infineon Technologies is introducing its new PQFN 2 x 2 mm2 OptiMOS 5 25 V and 30 V product family. By combining thin wafer technology and packaging innovation, the new devices enable significant performance benefits in an extremely small form factor. OptiMOS 5 25 V…

The European Investment Bank (EIB) is providing significant financial support to STMicroelectronics: a €600 million loan for the semiconductor group’s research and development (R&D) and pre-industrialisation activities in Europe. The operation concerns investments in R&D activities for innovative technologies and components, as well as in pilot production lines for advanced semiconductors. These investments will be implemented…

Vishay Intertechnology has introduced the latest device in its fourth-generation 600 V E Series power MOSFETs. Providing high efficiency for telecom, server, and datacenter power-supply applications, the Vishay Siliconix n-channel SiHK045N60E slashes on-resistance by 27 percent compared with previous-generation 600 V E Series MOSFETs — while delivering 60 percent lower gate charge. This results in…

Samsung Electronics, a provider of advanced semiconductor technology, has introduced its new fingerprint security IC (integrated circuit) ─ S3B512C ─ with enhanced security features. The new solution is EMVCo and Common Criteria Evaluation Assurance Level (CC EAL) 6+ certified and performs in line with Mastercard’s latest Biometric Evaluation Plan Summary (BEPS) specifications for biometric payment…

Vishay Intertechnology, Inc. has introduced two new n-channel TrenchFET MOSFETs that increase power density, efficiency, and board-level reliability in telecom and industrial applications. To achieve these design goals, the 60 V SiJH600E and 80 V SiJH800E combine ultra low on-resistance with high-temperature operation to +175° C and high continuous drain-current handling. The space-saving PowerPAK 8x8L package promotes board-level…

Vishay Intertechnology announced that the company has enhanced its MC AT precision series of automotive-grade, thin-film chip resistors with a wider range of resistance values in the 0402, 0603, and 0805 case sizes. The Vishay Beyschlag devices combine their high resistance values with TCR of ± 25 ppm/K, tight tolerances of ± 0.1 %, and…

The Optoelectronics group of Vishay Intertechnology has introduced a new automotive-grade, 4-quadrant silicon PIN photodiode in a standard surface-mount package. Enabling a variety of sensor and control applications for the automotive, consumer, and industrial markets, the Vishay Semiconductors K857PH combines high photo sensitivity with low 0.1 % crosstalk and virtually no tolerance between its segments. The…

Infineon Technologies presents the new MOTIX BTN99xx (NovalithIC+), a unique family of intelligent integrated half-bridges and the direct successor to the BTN89xx. Besides a p-channel high-side and an n-channel low-side MOSFET, BTN99xx also includes smart driver ICs fully integrated in a single package. Its ease-of-use, offering advanced protection and scalability, which makes the family ideal…

High-power density, optimized performance, and ease-of-use are key requirements when designing modern power systems. To offer practical solutions for design challenges in end applications, Infineon Technologies has launched a new generation of OptiMOS source-down (SD) power MOSFETs. These devices come in a PQFN 3.3 x 3.3 mm2 package and a wide voltage class ranging from…

STMicroelectronics, a global semiconductor serving customers across the spectrum of electronics applications, has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a variety of electronic products. Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting…

STMicroelectronics and Politecnico di Milano (PoLiMi) have inaugurated the expansion of semiconductor-manufacturing capabilities at PoliFab, the University’s micro and nanotechnology R&D center. Building on the long-standing collaboration between the two organizations, the PoliFab’s clean room — a facility where silicon wafers are made into semiconductor chips — has received state-of-the-art equipment from STMicroelectronics to boost…

Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, has announced the development of two technologies that reduce the energy and voltage application time for the write operation of spin-transfer torquemram magnetic random-access memory (STT-MRAM, hereinafter MRAM). On a 20-megabit (Mbit) test chip with embedded MRAM memory cell array in a 16 nm FinFET logic…