Protect SiC MOSFET gate drivers with TVS diodes

Littelfuse, Inc. announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. This innovative product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that replaces multiple Zener diodes or TVS components traditionally used for gate driver protection. View the video.

The TPSMB Asymmetrical TVS Diode Series provides superior protection for SiC MOSFET gate drivers, which are prone to overvoltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The unique asymmetrical design of the TPSMB Series supports SiC MOSFETs’ differing positive and negative gate driver voltage ratings, ensuring enhanced performance in a variety of demanding automotive power applications where SiC MOSFETs are used, including: Onboard chargers (OBCs); EV traction Inverters; I/O interfaces; Vcc buses.

These applications demand high-performance overvoltage protection (OVP) for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency.

The TPSMB Asymmetrical Series Surface-Mount TVS Diode offers the following key features and benefits: A Single-Component MOSFET Gate Driver Protection: Eliminates the need for multiple Zener or TVS diodes, streamlining design and reducing component count; Asymmetrical Gate Driver Voltage Protection: Designed to protect MOSFET gate drivers, which require different negative and positive voltage ratings; Compact Design: Available in a DO-214AA (SMB J-Bend) package, the series is ideal for space-constrained automotive designs; Automotive-Grade Quality: AEC-Q101-qualified, ensuring the highest reliability for automotive applications; High Power Dissipation: 600W peak pulse power dissipation (10×1000μs waveform) offers robust protection against transient overvoltage events; Low Clamping Voltage: VC < 10 V @ 30 A (8/20 µs) for optimmal negative gate drive protection; Wide Frequency Stability: Stable capacitance across a wide operating frequency range, up to 2 MHz, making it ideal for SiC MOSFET applications; Compatible with Leading SiC MOSFETs: Suited for use with Littelfuse and other market-leading automotive SiC MOSFETs.

The TPSMB Asymmetrical Series TVS Diode is available in tape and reel format in quantities of 3,000. Sample requests are accepted through authorized Littelfuse distributors worldwide.