Renesas expands its 5G mmWave beamformer portfolio

Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, has expanded its 5G beamformer IC family with two dual-polarization mmWave devices, optimized for 2×2 antenna architecture for 5G and broadband wireless applications — with best-in-class performance at n257, n258, and 261 bands.

The highly integrated F5288 and F5268 transmitter/receiver (8T8R) chipsets sit on a small 5.1 x 5.1mm BGA package and feature the industry’s highest Tx output power capability in silicon – delivering more than 15.5dBm linear output power ^{(note 1)} per channel.

With this combination, Renesas enables cost-efficient radio design with extended signal reach for wireless infrastructure applications including wide-area, small cell and macro base stations, as well as CPE, fixed wireless access (FWA) access points, and various other applications.

The new F5288 and F5268 ICs feature a unique Dynamic Array Power (DAP) technology that enables high-efficiency operation at linear output power levels programmable from 10 up to 16 dBm. This makes the third-generation ICs ideal for use in mobile and fixed wireless applications with a wide range of output power requirements. The flexibility allows communications customers to reduce design times by repurposing their antenna array designs across different applications.

“Adequate signal range – or lack thereof – remains the biggest challenge as the industry shifts to 5G mmWave technologies for both urban and suburban mobile and fixed wireless networks,” said Naveen Yanduru, VP of RF Communications Product Division at Renesas. “Renesas’ new beamformer ICs are a game changer for this evolving market, offering small, integrated beamforming solutions with high output power that enable communications customers to implement cost-effective basestation and FWA designs for long-range wireless applications.”

The F5288 and F5268
Renesas’ third-generation mmWave beamformer ICs address all the beamforming capabilities required by 5G systems while achieving the highest linear RF output power in any silicon technology with high efficiency.

The ICs’ dual-polarization eight-channel architecture provides a highly symmetric and low loss antenna routing network to improve overall antenna efficiency and reduce board costs. The exposed die package allows for more efficient thermal management at the board with improved heat dissipation through the back of the IC.

In addition, Renesas designed the package pinmap to simplify board design and reduce design risks. Lower complexity PCB design with minimum layer counts results in reduced board costs and faster time to market.

The F5288 and F5268 ICs also feature several of Renesas’ state-of-the-art technologies to enhance array-level performance.

Dynamic Array Power technology allows for a graceful scaling of output power with high efficiency. ArraySense technology with comprehensive on-chip sensor network allows users to monitor IC performance in array operation and apply critical corrections real-time. RapidBeam advanced digital control technology enables simultaneous synchronous and asynchronous control of several beamformer ICs to achieve extremely fast beamsteering operations.

Additional features:

Between 26.5 – 29.5GHz (F5288) and 24.25 – 27.5 GHz (F5268) operation
Advanced temperature compensation techniques to minimize RF performance degradation with varying temperatures
State-of-the-art phase and gain control including 360° phase control range with true six-bit resolution and up to 31.5dB gain control with 0.5dB steps
Improved Rx linearity modes to provide additional flexibility for the receiver lineup
Rx noise figures as low as ~4.5dB at room temperature and under 5.5dB at temperatures up to 95° C