Samsung Electronics, a world leader in advanced memory technology, announced that it had begun to mass produce the industry’s first 10nm class, 8GB DDR4 (double data rate) DRAM chips and the modules derived from them. DDR4 is most on demand memory chip for personal computers and IT networks around the globe. Samsung’s latest advancement will quicken the industry wide shift to innovative DDR4 products.
As per the market needs and boom, Samsung opened its door for “10nm Class DRAM” for the first time in the industry after overcoming technical hurdles in DRAM. These challenges were mastered using currently available Argon Fluoride (ArF) immersion lithography, free from the use of extreme ultraviolet (EUV) equipment. Samsung’s roll-out of the new 10nm class DRAM marks a milestone for the company after its first production of 20nm, 4GB DDR3 RAM in 2014.
Samsung’s 10nm DRAM will enable the highest level of investment efficiency in IT systems, it is a new growth engine for the global memory industry, quoted by Young-Hyun Jun president of memory business, Samsung Electronics. “In the future, they also planned to launch next generation 10nm class mobile DRAM products with high densities to help mobile manufacturers to develop more innovative products that add a convenience to mobile device users”. This 10nm, 8Gb DRAM significantly improves the wafer productivity of 20nm 8GB DDR4 DRAM by more than 30%.
The new DRAM supports a data transfer rate of up to 3,200 Mbps, which is 30% higher than its predecessor 20nm DDR4 RAM. The new module chips also consume 10 to 20 percent of less power, which will improve the design efficiency for next generation, high performance computing systems and other enterprise networks. This industry’s first 10nm DRAM also results in advanced memory design and manufacturing technology integration. To reach an extremely high level DRAM scalability, Samsung has taken its technological innovation one step further. Key technology developments in this module are proprietary cell design technology, quadruple pattering technology, and ultra-thin dielectric layer deposition.
Based on the advancements of new 10nm class DDR4 DRAM, Samsung also focuses to introduce a 10nm class mobile DRAM solution with high density and speed later this year, which will further create a strong leadership in the ultra HD smartphone market. While introducing a wide array of 10nm class DDR4 modules with capacities ranging from 4GB for PCs to 128GB for enterprise servers. Samsung also planned to extend its 20nm DRAM line-up to its new 10nm class DRAM portfolio throughout the year.
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