Littelfuse Inc. recently expanded its Silicon Carbide (Sic) profile of semiconductors. The list of new additions include five GEN2 Series 3L TO-247, 1200 V Schottky Diodes along with three GEN2 Series 2L TO-263 Schottky Diodes. As compared to their preceding silicon equipment, GEN2 SiC Schottky Diodes have an ability to dramatically bring down the switching losses and pave a way out for solid enhancement of robustness and efficiency of power electronics frameworks.
The list of application of the GEN2 1200V Schottky Diode Series has numerous pointers varying from boost/buck stakes in DC-DC converters to Power Factor Correction (PFC), high-frequency output modification, free-wheeling diodes, as well as Electric Vehicle charging stations.
As the Global Product marketing Manager of Power Semiconductors, Semiconductors Business Unit at Littelfuse, puts it, “These GEN2 SiC Schottky Diodes in 3L TO-247 and 2L TO-263 packages complement the 1200 V SiC MOSFETs and other GEN2 1200 V SiC Schottky Diodes already available from Littelfuse. We continue to strengthen our broad product portfolio, which, after the acquisition of IXYS, positions Littelfuse as a Tier 1 supplier for power semiconductor devices.” The diodes can be availed in tubes for quantities equating 450.
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