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STMicroelectronics launches new MasterGaN integrated power packages

By Michelle Froese

Easing the transition to high-efficiency wide-bandgap technology, STMicroelectronics has released the MasterGaN3* and MasterGaN5 integrated power packages for applications up to 45 and 150W.

Joining the MasterGaN1, MasterGaN2, and MasterGaN4 — which target applications from 65 to 400W — the additions give extra flexibility to choose the optimum Gallium Nitride (GaN) device and driver solution when designing switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC/DC converters.

ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges.

Combined with the higher switching frequencies possible with GaN transistors, these integrated devices enable power supplies that are up to 80 percent smaller than silicon-based designs, as well as extremely robust and reliable.

The GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance (Rds(on)) of 225 and 450mΩ, making these devices suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450mΩ Rds(on) for use in topologies, such as LLC-resonant and Active Clamp Flyback.

In common with other MasterGaN family members, both devices have inputs compatible with logic signals from 3.3V to 15V, which simplifies connection of a host DSP, FPGA, or microcontroller, and external devices such as Hall sensors. They also integrate protection including low-side and high-side undervoltage lockout (UVLO), gate-driver interlocks, over-temperature protection, and a shutdown pin.

Each MasterGaN device is supported with a dedicated prototype board to help designers jump-start new power-supply projects.

The EVALMASTERGAN3 and EVALMASTERGAN5 boards contain circuitry to generate single-ended or complementary driving signals. There is an adjustable dead-time generator, as well as connections for the user to apply a separate input signal or PWM signal, add an external bootstrap diode to help with capacitive loads, and insert a low-side shunt resistor for peak-current-mode topologies.


Filed Under: Components, News, Power Management, Semiconductors
Tagged With: converters, dc, galliumntrid, gatedrivers, integratedcircuit, mastergan5, mofset, powermanagement, semiconductor, STMicroelectronics, transistor
 

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