In order to meet the memory market’s shortage of high-speed CMOS DDR3 and low voltage DDR3 SDRAMs, Alliance Memory has come up with a new die version (B die) for its 2Gb and 4Gb devices in the 96-ball FBGA package.  The DDR architecture of these SDRAMs enables in achieving extremely fast transfer rates of 1600Mbps and clock rates of 800MHz. With minimal die shrinks, these devices offer reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in newer-generation microprocessors.

Alliance Memory has introduced new 8Mb and 16Mb x 32 devices in the 90-ball 8 mm by 13 mm TFBGA package in order to meet the demand for high-density fast CMOS SRAMs. Dimensionally, 8Mb AS7C325632-10BIN and 16Mb AS7C351232-10BIN are configured as 256K x 32 and 512K x 32, respectively. These feature access times of 10 ns and minimum data retention voltages of 1.5 V. This SRAMs offer space-savvy alternatives to solutions in larger 119-ball packages. As far as the applications are concerned, the devices have been optimised for networking routers and switches, test and medical equipment, and automotive applications.

Alliance Memory has unveiled a new 1 Gb high-speed CMOS double data rate synchronous DRAM in the 66-pin TSOP II package. The AS4C128M8D1-6TIN operates in the industrial temperature range of -40°C to +85°C and carries a rare internal configuration of 4 banks of 32M word x bits. It also features a clock frequency of up to 166 MHz for fast data transfer rates, reliable drop-in and pin-to-pin compatible replacement for a number of solutions. It’s ideally suited for industrial, medical, communications and military solutions involving high memory bandwidth. Further, the SDRAM operates from a single +2.5V (±0.2V) power supply, equipped with a power-down mode to lower power consumption, and offers a data mask for write control.

Alliance Memory, a worldwide provider of LEGACY memory products, has launched a new line of high-speed CMOS mobile low power DDR2 (LPDDR2) SDRAMs. These devices have been released with densities of 1Gb, 2Gb, and 4Gb in the 134-ball package. A wide variety of power saving features is also available with the new offering like 1.2 V/1.8 V operating voltages, improved battery life in portable electronics, and high density enabling ultra-slim designs.  The new LPDDR2 SDRAMs offer reliable drop-in, pin-to-pin compatible replacements for a number of similar solutions in ultra-low-voltage cores and I/O power supplies for mobile devices like smartphones, tablets, etc. The ICs are available with auto temperature-compensated self-refresh (TCSR) to ensure minimal power consumption at lower ambient temperatures. 

Alliance Memory, a worldwide provider of Legacy memory products for communications, computing, industrial and consumer markets, has introduced two new SDRAMs. These new Synchronous DRAMs namely- AS4C32M16SB-7TCN and AS4C32M16SB-7TIN have been rolled out in the 54-pin TSOP II package.  The devices are available in commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges and act as pin-for-pin replacements for Micron Technology’s discontinued 32M x 16 MT48LC32M16A2P-75:C (AS4C32M16SM-7TCN) and MT48LC32M16A2P-75 IT:C (AS4C32M16SM-7TIN) SDRAMs.