Allegro MicroSystems, a global provider in power and sensing solutions for motion control and energy-efficient systems, has announced the launch of its new Power-Thru isolated gate driver. This is the first product introduced in the company’s Power-Thru portfolio. Allegro’s new isolated gate driver creates a single-package solution that drives GaN FETs with up to a…
STMicroelectronics begins volume production of PowerGaN devices
STMicroelectronics has begun volume production of e-mode PowerGaN HEMT (high-electron-mobility transistor) devices that simplify the design of high-efficiency power-conversion systems. The STPOWER GaN transistors raise performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification. The first two products in the family, the SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT in a…
Airbus and STMicroelectronics collaborate on advancing aircraft electrification
Airbus, a global pioneer in the aerospace industry, and STMicroelectronics, a global semiconductor provider, have signed an agreement to cooperate on power electronics Research & Development to support more efficient and lighter power electronics, essential for future hybrid-powered aircraft and full-electric urban air vehicles. The collaboration builds on evaluations already conducted by both companies to explore…
Infineon releases complete portfolio of high-quality GaN devices
Infineon Technologies AG has successfully integrated the CoolGaN 600 V hybrid-drain-embedded gate-injection transistor (HD-GIT) technology into its in-house manufacturing. The company is now releasing the complete portfolio of its high-quality GaN devices to the broader market. Taking advantage of Infineon’s fully owned and controlled supply chain, the expanded GaN portfolio includes a wide range of…
TI and Chicony Power partner on GaN technology for laptops
Texas Instruments (TI), a provider of high-voltage semiconductor solutions, announced that Chicony Power designed in TI’s integrated gallium-nitride (GaN) technology to power its latest 65-W laptop power adapter, Le Petit. Leveraging TI’s half-bridge GaN FET with integrated gate driver, LMG2610, Chicony Power and TI collaborated on a design to reduce the size of Chicony’s power adapter…
STMicroelectronics and MACOM announce successful RF GaN-on-Si prototypes
STMicroelectronics, a global semiconductor provider, and MACOM Technology Solutions Holdings, a supplier of semiconductor products for the telecommunications, industrial, defense, and datacenter industries, have announced the successful production of radio-frequency Gallium-Nitride-on Silicon (RF GaN-on-Si) prototypes. With this achievement, ST and MACOM will continue to work together and enhance our relationship. RF GaN-on-Silicon offers high potential for…
TI addresses power-management design challenges for EVs and industrial applications
Texas Instruments (TI) demonstrated at the Applied Power Electronics Conference (APEC) last week, focused on how engineers can overcome some of their most pressing power-management design challenges. The company showcased the newest additions to its power-management portfolio and demonstrate system-level solutions for increasing power density, reducing electromagnetic interference (EMI), noise, and quiescent current (IQ), and…
STMicroelectronics’ 50W GaN converter enables high-efficiency power designs
STMicroelectronics‘ new VIPerGaN50 simplifies building single-switch flyback converters up to 50 Watts and integrates a 650V gallium-nitride (GaN) power transistor for superior energy efficiency and miniaturization. With its single-switch topology, high integration, current-sensing, and protection circuitry built-in, the VIPerGaN50 comes in a compact and low-cost 5 x 6mm package. The speed of the integrated GaN transistor…
Infineon releases new single-channel, gate driver IC family
Minimized R&D efforts and costs, along with highly efficient medium-voltage gallium-nitride (GaN) switches, are key requirements for modern power-electronics systems. In accordance with its strategically-designed GaN product portfolio to continuously strengthen full system solutions, Infineon Technologies is introducing the EiceDRIVER 1EDN71x6G HS 200V, single-channel gate driver IC family. The new product family is designed to…
Microchip expands its gallium-nitride RF power portfolio
Microchip Technology Inc. recently announced a significant expansion of its gallium-nitride (GaN), radio-frequency (RF). power-device portfolio with new MMICs and discrete transistors that cover frequencies up to 20 gigahertz (GHz). The devices combine high power-added efficiency (PAE) and high linearity to deliver new levels of performance in applications — ranging from 5G to electronic warfare, satellite communications, commercial…
TI GaN technology to support Delta Electronics’ power supplies
Texas Instruments (TI) has announced that its gallium-nitride (GaN) technology and C2000 real-time microcontrollers (MCUs) are being combined with Delta Electronics’ high-efficiency power electronics expertise in the design of an enterprise server power-supply unit (PSU). They feature an 80-percent improvement in power density with one percent better efficiency — up to 99.2 percent — for…
Infineon and Panasonic to advance technology for GaN-powered devices
Infineon Technologies and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium-nitride (GaN) technology, offering higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for…
NXP combines technologies to drive optimal 5G network performance
NXP Semiconductors N.V. recently announced an industry milestone for 5G energy efficiency with the integration of Gallium Nitride (GaN) technology to its multi-chip module platform. Building on the company’s investment in its GaN fab in Arizona — the most advanced fab dedicated to RF power amplifiers in the U.S. — NXP is the first to…