Power Integrations has unveiled the 1700 V InnoMux-2, a gallium nitride (GaN) switch designed for high-voltage power semiconductors. The technology integrates into the company’s InnoMux-2 power supply IC family, engineered for multi-output power supplies operating from high-voltage DC sources. Andy Smith, Director of Training at Power Integrations, explained, “The new device is fabricated using our…
Allegro offers high-efficiency isolated gate-driver IC
Allegro MicroSystems, a global provider in power and sensing solutions for motion control and energy-efficient systems, has announced the launch of its new Power-Thru isolated gate driver. This is the first product introduced in the company’s Power-Thru portfolio. Allegro’s new isolated gate driver creates a single-package solution that drives GaN FETs with up to a…
STMicroelectronics begins volume production of PowerGaN devices
STMicroelectronics has begun volume production of e-mode PowerGaN HEMT (high-electron-mobility transistor) devices that simplify the design of high-efficiency power-conversion systems. The STPOWER GaN transistors raise performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification. The first two products in the family, the SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT in a…
Infineon releases complete portfolio of high-quality GaN devices
Infineon Technologies AG has successfully integrated the CoolGaN 600 V hybrid-drain-embedded gate-injection transistor (HD-GIT) technology into its in-house manufacturing. The company is now releasing the complete portfolio of its high-quality GaN devices to the broader market. Taking advantage of Infineon’s fully owned and controlled supply chain, the expanded GaN portfolio includes a wide range of…
TI and Chicony Power partner on GaN technology for laptops
Texas Instruments (TI), a provider of high-voltage semiconductor solutions, announced that Chicony Power designed in TI’s integrated gallium-nitride (GaN) technology to power its latest 65-W laptop power adapter, Le Petit. Leveraging TI’s half-bridge GaN FET with integrated gate driver, LMG2610, Chicony Power and TI collaborated on a design to reduce the size of Chicony’s power adapter…
Infineon releases new single-channel, gate driver IC family
Minimized R&D efforts and costs, along with highly efficient medium-voltage gallium-nitride (GaN) switches, are key requirements for modern power-electronics systems. In accordance with its strategically-designed GaN product portfolio to continuously strengthen full system solutions, Infineon Technologies is introducing the EiceDRIVER 1EDN71x6G HS 200V, single-channel gate driver IC family. The new product family is designed to…
STMicroelectronics offering new family of GaN power semiconductors
STMicroelectronics, a global semiconductor serving customers across the spectrum of electronics applications, has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a variety of electronic products. Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting…
Microchip expands its gallium-nitride RF power portfolio
Microchip Technology Inc. recently announced a significant expansion of its gallium-nitride (GaN), radio-frequency (RF). power-device portfolio with new MMICs and discrete transistors that cover frequencies up to 20 gigahertz (GHz). The devices combine high power-added efficiency (PAE) and high linearity to deliver new levels of performance in applications — ranging from 5G to electronic warfare, satellite communications, commercial…
CUI offers new 300 and 120 W compact GaN adapters
CUI Inc, a Bel group company, has announced the expansion of two GaN desktop ac-dc power supply series to its SDI product family, broadening their product range for the GaN adapter line. The SDI300G-U and SDI300G-UR offer 300 W of continuous power from a compact desktop package and boast up to 100% increase in power…
Infineon and Panasonic to advance technology for GaN-powered devices
Infineon Technologies and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium-nitride (GaN) technology, offering higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for…
STMicroelectronics enhances automation with new, single-chip GaN gate driver
STMicroelectronics’ new STDRIVEG600 half-bridge gate driver is a high-current output and 45ns propagation delay. This offers a close match between the high and low-side outputs to, ideally, handle high-frequency switching of GaN enhancement-mode FETs. Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V…
NXP combines technologies to drive optimal 5G network performance
NXP Semiconductors N.V. recently announced an industry milestone for 5G energy efficiency with the integration of Gallium Nitride (GaN) technology to its multi-chip module platform. Building on the company’s investment in its GaN fab in Arizona — the most advanced fab dedicated to RF power amplifiers in the U.S. — NXP is the first to…