CUI Inc, a Bel group company, has announced the expansion of two GaN desktop ac-dc power supply series to its SDI product family, broadening their product range for the GaN adapter line. The SDI300G-U and SDI300G-UR offer 300 W of continuous power from a compact desktop package and boast up to 100% increase in power…
Infineon and Panasonic to advance technology for GaN-powered devices
Infineon Technologies and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium-nitride (GaN) technology, offering higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for…
STMicroelectronics enhances automation with new, single-chip GaN gate driver
STMicroelectronics’ new STDRIVEG600 half-bridge gate driver is a high-current output and 45ns propagation delay. This offers a close match between the high and low-side outputs to, ideally, handle high-frequency switching of GaN enhancement-mode FETs. Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V…
NXP combines technologies to drive optimal 5G network performance
NXP Semiconductors N.V. recently announced an industry milestone for 5G energy efficiency with the integration of Gallium Nitride (GaN) technology to its multi-chip module platform. Building on the company’s investment in its GaN fab in Arizona — the most advanced fab dedicated to RF power amplifiers in the U.S. — NXP is the first to…