STMicroelectronics has released a new class of IGBTs with an increased breakdown-voltage capability of 1350V and a maximum operating temperature of 175° C. The higher ratings ensure a greater design margin, robust performance, and extended reliability under all operating conditions. The new STPOWER IH2 series IGBTs also permit increased power-conversion efficiency. Favorable parameters include low saturation…
Infineon expands its 7th generation TRENCHSTOP IGBT potfolio
Infineon Technologies is expanding its 7th generation TRENCHSTOP IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature an EC7 co-packed diode with an advanced emitter-controlled design and high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions. Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7…
Infineon and Semikron Danfoss sign supply agreement for electromobility chips
Vehicles with fully or partially electrified drivetrains will account for two-thirds of cars produced by 2028, as per analyst forecasts. This rapid growth of electromobility is driving the demand for power semiconductors. Against this background, Infineon Technologies and Semikron Danfoss have signed a multi-year volume agreement for the supply of silicon-based electromobility chips. Infineon will…
New Microsoft MPLAB SiC Power Simulator evaluates SiC power devices
The electrification of everything is driving the growth of SiC semiconductors as large market segments such as E-Mobility, sustainability and industrial turn to SiC power solutions because of its fast-switching capabilities, lower power loss, and higher-temperature performance. To help power design engineers transition to SiC power solutions with ease, speed and confidence, Microchip Technology announces…
New gate driver IC supports high-voltage power devices
Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, announced a new gate driver IC, designed to drive high-voltage power devices such as Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU…
Vishay launches new Hyperfast and Ultrafast rectifiers
Vishay Intertechnology has introduced 15 new FRED Pt Gen 5 600 V and 1200 V Hyperfast and Ultrafast rectifiers in the compact SOT-227 package. Offering the best conduction and switching loss trade-off for devices in their class, the Vishay Semiconductors rectifiers are designed to increase the efficiency of high-frequency converters and of soft-switched or resonant designs.…
Renesas unveils new-generation Si IGBTs for EV inverters
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next-generation electric vehicle (EVs) inverters, AE5-generation IGBTs will be mass produced starting in the first half…
ENPOWER first to adopt Infineon’s automotive-grade discrete IGBT EDT2 devices
Zhuhai ENPOWER Electric Co., a China-based supplier of inverters for the automotive industry, is the first to integrate the latest 750 V automotive-grade IGBTs AIKQ120N75CP2 and AIKQ200N75CP2 from Infineon Technologies. The discrete IGBT EDT2 devices in TO-247PLUS package enable performance boosts and system cost savings in main inverter applications and DC link discharge switches of electric vehicles.…
Infineon offers Press Pack IGBT for transmission and distribution applications
Infineon Technologies Bipolar GmbH & Co. KG has expanded its high-power Prime Switch family with the new Press Pack IGBT (PPI) with internal freewheeling diodes (FWD) in ceramic disc housings. This PPI is specifically designed for transmission and distribution applications and is ideal for high-current Modular Multilevel Converter (MMC), medium-voltage drives, DC breakers, wind-turbine converters,…
Infineon offers 750 V EDT2 IGBTs, optimized for automotive applications
Infineon Technologies is launching the new EDT2 IGBTs in a TO247PLUS package. The devices are optimized for automotive discrete traction inverters and expand Infineon’s portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can…
Infineon expands isolated EiceDRIVER Enhanced gate-driver portfolio
The highest possible system efficiency is a key requirement for modern power electronics, which is driving the development of increasingly higher power densities. However, high-system values are at stake should short-circuit events occur. To prevent this and enable systems with the best protection, Infineon Technologies is expanding its portfolio of isolated EiceDRIVER Enhanced gate drivers…
New dual gate drivers simplify SiC and IGBT switching circuits
Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications. The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on…
Toshiba releases high-peak output current photocouplers
Toshiba Electronic Devices & Storage Corporation has introduced two photocouplers, “TLP5705H” and “TLP5702H,” housed in a thin SO6L package, for use as insulated gate drivers for small to medium-capacity IGBTs/MOSFETs. Volume shipments have already begun. TLP5705H is Toshiba’s first product to deliver a peak output current rating of ±5.0A in a thin package (SO6L) of only…
Infineon adds new current ratings to its EconoDUAL 3 portfolio
Infineon Technologies recently launched new current ratings for its EconoDUAL 3 portfolio with TRENCHSTOP IGBT7 chips. With the broad range of current classes from 300 up to 900 A, the portfolio offers inverter designers a high degree of flexibility while also providing increased power density and performance. In addition to solar and drive applications, the portfolio is…
Microchip’s advanced power modules qualified to aerospace standards
In the race to reduce aircraft emissions, developers increasingly are moving toward more efficient designs including electrical systems that replace today’s pneumatics and hydraulics powering everything from on-board alternators to actuators and Auxiliary Power Units (APUs). To enable next-generation aircraft electrical systems, new power conversion technology is required. Microchip Technology has announced its development with…
Microchip offers 1700V silicon-carbide power solutions
Today’s energy-efficient electric charging systems powering commercial vehicle propulsion — as well as auxiliary power systems, solar inverters, solid-state transformers, and other transportation and industrial applications — all rely on high-voltage switching power devices. To best meet these requirements, Microchip Technology announced the expansion of its silicon-carbide portfolio with a family of high-efficiency, high-reliability 1700V…