Innoscience Technology has expanded its portfolio with two 100V automotive-grade GaN devices. The company’s INN100W135A-Q (RDS(on),max = 13.5 mΩ) and smaller package INN100W800A-Q (RDS(on),max = 80 mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC-DC converters and Class D audio applications in the automotive sector. The…
16-String BMS device operates with sub-50°C temperature rise
Innoscience Technology has launched a new generation of battery management system (BMS) solutions based on VGaN technology. Increased demand for convenient eco-friendly travel, mobile energy storage, and small power solutions has driven rapid market developments. Battery protection system (BMS) technology needs further advancement to improve battery safety and efficiency. GaN technology supports this by improving efficiency,…
Innoscience Technology unveils versatile gate driver for next-gen GaN power systems
Innoscience Technology announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications. The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with the controller, optocoupler, and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver…
Innoscience unveils GaN gate driver for high-performance power applications
Innoscience Technology announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications. The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with the controller, optocoupler, and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver…
Incosciente expands power transistor portfolio with 650 V devices in TOLL package
Innoscience announced new, low RDS(on), high-power devices in its ever-broadening family of 650V/700V enhancement-mode power transistors. New 30, 50, and 70mΩ RON parts are available in the industry-standard TOLL (TO-Leadless) package. The 70mΩ part is also available as an 8×8 DFN part. Members of a new high-power product platform from Innoscience, the new INN650TA0x0AH and…
Innoscience introduces 700 V integrated GaN HEMT IC family for USB-PD applications
Innoscience announced a family of four new integrated devices that combine power GaN HEMT, driver, current sense, and other functions within a single, industry-standard QFN 6x8mm package. The 700V ISG610x SolidGaN devices cover the range from 140mΩ to 450mΩ and save PCB space and BOM count while increasing efficiency and simplifying design for applications including…
Innoscience launches 100 V GaN IC for 48V/60V battery management systems
Innoscience Technology has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with a wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus, etc. The new 100V VGaN (INV100FQ030A) can be employed…