Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next-generation electric vehicle (EVs) inverters, AE5-generation IGBTs will be mass produced starting in the first half…

Toshiba Electronic Devices & Storage Corporation has introduced two photocouplers, “TLP5705H” and “TLP5702H,” housed in a thin SO6L package, for use as insulated gate drivers for small to medium-capacity IGBTs/MOSFETs. Volume shipments have already begun. TLP5705H is Toshiba’s first product to deliver a peak output current rating of ±5.0A in a thin package (SO6L) of only…