Global megatrends such as digitalization, and decarbonization, call for wide bandgap (WBG) devices (SiC/GaN). Due to their unique technological characteristics, they enable the highest performance and energy efficiency. With a commitment to these domains, Infineon Technologies and Delta Electronics, Inc., are deepening their collaboration to deliver superior solutions for the convenience of end customers. The…

The increasing demand for high-power density is pushing developers to adopt 1500 VDC link in their applications to increase the rated power-per-inverter and reduce system costs. However, 1500 VDC-based systems also pose more challenges on the system design, such as fast switching at high DC voltage, which typically requires a multi-level topology. This leads to…

STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction, multi-drain, silicon-power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions. The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has…

Infineon Technologies has introduced a new CoolSiC technology to its lineup: the CoolSiC MOSFET 1200 V M1H. This advanced silicon-carbide (SiC) chip will be implemented in a widely extended portfolio using the popular Easy Module family — with discrete packages using .XT interconnect technology. The M1H chip offers high flexibility and is suitable for solar…

Megatrends including digitalization, urbanization, and electromobility all equate to an increase in power consumption. At the same time, energy efficiency is more important than ever. Infineon Technologies is responding to these megatrends and related demands by offering a new family of CoolSiC 650 V silicon-carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top performance.…

Committed to setting new technology standards in discrete power-MOSFET technologies, Infineon Technologies is introducing its new PQFN 2 x 2 mm2 OptiMOS 5 25 V and 30 V product family. By combining thin wafer technology and packaging innovation, the new devices enable significant performance benefits in an extremely small form factor. OptiMOS 5 25 V…

Unlocking the potential of its best-in-class power MOSFET technology, Infineon Technologies is introducing the MERUS 2-channel, analog input, class D audio amplifier multichip module (MCM) MA5332MS. Class D audio power amplifiers offer a combination of small size, low heat dissipation, high integration, and excellent sound quality. The new module is a powerful upgrade to its predecessor,…

Vishay Intertechnology has introduced the latest device in its fourth-generation 600 V E Series power MOSFETs. Providing high efficiency for telecom, server, and datacenter power-supply applications, the Vishay Siliconix n-channel SiHK045N60E slashes on-resistance by 27 percent compared with previous-generation 600 V E Series MOSFETs — while delivering 60 percent lower gate charge. This results in…

STMicroelectronics’ latest high-side switches, the IPS2050H and IPS2050H-32, permit two programmable current-limit values for smart driving of capacitive loads that draw high startup current. These new dual-channel switches have an input-voltage range from 8 to 60V to withstand up to 65V on the input pin, ensuring flexibility and robust performance in industrial applications. The integrated power MOSFET…

Diodes Incorporated has introduced the DGD0579U high and low-side gate driver. This high-frequency device, which has a built-in bootstrap diode, is capable of driving two N-channel MOSFETs in the half-bridge configurations that are commonly used for motor control and DC-DC power delivery functions. It also targets high-power applications, such as cordless power tools, e-bikes, and…

Vishay Intertechnology, Inc. has introduced two new n-channel TrenchFET MOSFETs that increase power density, efficiency, and board-level reliability in telecom and industrial applications. To achieve these design goals, the 60 V SiJH600E and 80 V SiJH800E combine ultra low on-resistance with high-temperature operation to +175° C and high continuous drain-current handling. The space-saving PowerPAK 8x8L package promotes board-level…

Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications. The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on…

Infineon Technologies presents the new MOTIX BTN99xx (NovalithIC+), a unique family of intelligent integrated half-bridges and the direct successor to the BTN89xx. Besides a p-channel high-side and an n-channel low-side MOSFET, BTN99xx also includes smart driver ICs fully integrated in a single package. Its ease-of-use, offering advanced protection and scalability, which makes the family ideal…

High-power density, optimized performance, and ease-of-use are key requirements when designing modern power systems. To offer practical solutions for design challenges in end applications, Infineon Technologies has launched a new generation of OptiMOS source-down (SD) power MOSFETs. These devices come in a PQFN 3.3 x 3.3 mm2 package and a wide voltage class ranging from…

Minimized R&D efforts and costs, along with highly efficient medium-voltage gallium-nitride (GaN) switches, are key requirements for modern power-electronics systems. In accordance with its strategically-designed GaN product portfolio to continuously strengthen full system solutions, Infineon Technologies is introducing the EiceDRIVER 1EDN71x6G HS 200V, single-channel gate driver IC family. The new product family is designed to…

Following the successful launch of the HYC150 and HYC300 of their hypercharger product line, alpitronic recently introduced the state-of-the-art 50 kW DC electric-vehicle charger HYC50. It’s the first wall-mounted DC charger in this power range featuring two charging ports that allow fast-charging of one vehicle at 50 kW or of two vehicles simultaneously at 25…

STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs. ST’s new SiC devices are advancing the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria. ST has incorporated…

E-mobility and renewable energy systems require power-management solutions that drive performance and cost efficiencies while speeding up development time. To keep pace with these requirements, Microchip Technology announced its collaboration with Mersen on a 150 kilovolt-ampere (kVA), three-phase, silicon-carbide Power Stack Reference Design. Mersen is a global provider of power-management solutions for several industrial sectors,…

Toshiba Electronic Devices & Storage Corporation has introduced two photocouplers, “TLP5705H” and “TLP5702H,” housed in a thin SO6L package, for use as insulated gate drivers for small to medium-capacity IGBTs/MOSFETs. Volume shipments have already begun. TLP5705H is Toshiba’s first product to deliver a peak output current rating of ±5.0A in a thin package (SO6L) of only…

Nexperia, the expert in essential semiconductors, has announced the industry’s first range of A-selection Zener diodes. With a tolerance of just ±1%, the BZT52H-A (SOD123F) and BZX384-A (SOD323) series provide a higher precision voltage reference compared to the B (±2%) and C (±5%) variants. Matching the rising demands of mobile, portable/wearable, automotive and industrial applications…