Selecting components is one of the most essential and critical processes when designing any electronic system. Poor component selection can lead to many problems within the design, PCB layout, power budget, etc. In this article, we will discuss how to select a component for a low-power-optimized design. Resistor The power dissipated by a resistor is…
ZF relying on STMicroelectronics for silicon carbide devices
The technology group ZF will, from 2025, purchase silicon carbide devices from STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications. Under the terms of the multi-year contract, ST will supply a volume of double-digit millions of silicon carbide devices to be integrated into ZF’s new modular inverter architecture going into series production in…
STMicroelectronics simplifies SiC inverter designs
STMicroelectronics has released two STPOWER modules that contain 1200V silicon-carbide (SiC) MOSFETs in popular configurations. Each uses ST’s ACEPACK 2 package technology to ensure high power density and simplified assembly. The first of the new modules, the A2F12M12W2-F1, is a four-pack module that provides a convenient and compact full-bridge solution for circuits such as DC/DC converters. Another module,…
Taiwan Semiconductor launches new 40V power MOSFETs
Taiwan Semiconductor introduces the new 40V PerFET (NH Series) power MOSFETs with a PDFN33 package. The new MOSFETs are built on proprietary device structures and processes that enable exceptionally low on-state resistance and switching figure-of-merit (FOM – R*Q). The achievement of 35% FOM reduction, compared to previous technology (NB Series), puts this portfolio at the…
Nexperia launches enhanced electrothermal models for its MOSFET devices
Nexperia, an expert in essential semiconductors, has released new, enhanced electrothermal models for its MOSFET devices. Semiconductor manufacturers commonly provide simulation models for their MOSFETs. But these typically only include a limited number of device parameters that have been modeled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete…
Microchip unveils industry’s lowest on-resistance 3.3 kV silicon-carbide power devices
System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives, and energy infrastructure solutions require high-voltage switching technology to increase efficiency, reduce system size and weight. Microchip Technology has announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC…
Next-generation EiceDRIVER 2EDN gate driver ICs set new benchmark for form factor
Infineon Technologies is releasing a new EiceDRIVER 2EDN product family. Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components. Building on this expansion, the 2EDN family can now drive the power-switch device performance in applications…