Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, recently announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations fabricated — using a 22-nm process. The test chip includes a 32-megabit (Mbit) embedded MRAM memory cell array and…
Renesas develops write technologies for embedded STT-MRAM
Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, has announced the development of two technologies that reduce the energy and voltage application time for the write operation of spin-transfer torquemram magnetic random-access memory (STT-MRAM, hereinafter MRAM). On a 20-megabit (Mbit) test chip with embedded MRAM memory cell array in a 16 nm FinFET logic…