SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. In addition to smaller die sizes, third-generation SIC devices offer faster switching speeds and reduced losses. The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39…
Automotive-qualified SiC device targets high-voltage applications
SemiQ Inc. has announced its third-generation QSiC 1200V MOSFET, a silicon carbide device engineered for high-voltage applications. The new design achieves a 20% reduction in die size compared to the company’s second-generation devices while delivering enhanced switching performance and efficiency metrics. The device features key electrical specifications including a 1200V drain-to-source voltage (VDS), total switching…