As digitalization, urbanization, and the rise of electro-mobility continue to shape the rapidly evolving world, the demand for power consumption is reaching unprecedented levels. Acknowledging energy efficiency as an important concern, Infineon Technologies addresses these megatrends with its silicon carbide (SiC) CoolSiC MOSFET 650 V in TO leadless (TOLL) packaging. The new SiC MOSFETs are…
New Microsoft MPLAB SiC Power Simulator evaluates SiC power devices
The electrification of everything is driving the growth of SiC semiconductors as large market segments such as E-Mobility, sustainability and industrial turn to SiC power solutions because of its fast-switching capabilities, lower power loss, and higher-temperature performance. To help power design engineers transition to SiC power solutions with ease, speed and confidence, Microchip Technology announces…
Infineon teams with Infinitum to drive decarbonization
At APEC 2023, Infineon Technologies announced that the company is joining forces with Infinitum, creator of the sustainable, breakthrough air core motor. In this technology collaboration, Infineon will provide silicon-carbide (SiC) CoolSiC MOSFETs and other key semiconductor components that greatly contribute to the Infinitum motor system’s precise motor control, optimal power, and energy savings. The…
New gate driver IC supports high-voltage power devices
Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, announced a new gate driver IC, designed to drive high-voltage power devices such as Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU…
STMicroelectronics boosts EV performance with new SiC power modules
STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, has released high-power modules for electric vehicles that boost performance and driving range. ST’s new silicon-carbide (SiC) power modules have been selected for Hyundai’s E-GMP electric-vehicle (EV) platform shared by KIA EV6 and several models. Five new SiC-MOSFET-based power modules provide flexible choices…
STMicroelectronics building a silicon-carbide substrate manufacturing facility in Italy
STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, will build an integrated silicon-carbide (SiC) substrate manufacturing facility in Italy to support the increasing demand from ST’s customers for SiC devices across automotive and industrial applications as they transition to electrification and seek higher efficiency. Production is expected to start in…
STMicroelectronics simplifies SiC inverter designs
STMicroelectronics has released two STPOWER modules that contain 1200V silicon-carbide (SiC) MOSFETs in popular configurations. Each uses ST’s ACEPACK 2 package technology to ensure high power density and simplified assembly. The first of the new modules, the A2F12M12W2-F1, is a four-pack module that provides a convenient and compact full-bridge solution for circuits such as DC/DC converters. Another module,…
STMicroelectronics releases new silicon-carbide devices for EVs
STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs. ST’s new SiC devices are advancing the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria. ST has incorporated…
STMicroelectronics and IME partner on silicon carbide R&D for EV market
The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and STMicroelectronics, a global semiconductor provider, announced the start of a Research & Development (R&D) collaboration in the field of silicon carbide (SiC) for power-electronics applications in the automotive and industrial markets. The collaboration sets a foundation for a comprehensive SiC ecosystem…
STMicroelectronics manufactures first 200mm silicon-carbide wafers
STMicroelectronics, a global semiconductor provider, announced that it has manufactured the first 200mm (8-inch) silicon-carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden. The transition to 200mm SiC wafers marks an important milestone in the capacity build-up for ST’s customer programs in automotive and industrial sectors. It will further…