STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs. ST’s new SiC devices are advancing the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria. ST has incorporated…
STMicroelectronics and IME partner on silicon carbide R&D for EV market
The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and STMicroelectronics, a global semiconductor provider, announced the start of a Research & Development (R&D) collaboration in the field of silicon carbide (SiC) for power-electronics applications in the automotive and industrial markets. The collaboration sets a foundation for a comprehensive SiC ecosystem…
STMicroelectronics manufactures first 200mm silicon-carbide wafers
STMicroelectronics, a global semiconductor provider, announced that it has manufactured the first 200mm (8-inch) silicon-carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden. The transition to 200mm SiC wafers marks an important milestone in the capacity build-up for ST’s customer programs in automotive and industrial sectors. It will further…