STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, will build an integrated silicon-carbide (SiC) substrate manufacturing facility in Italy to support the increasing demand from ST’s customers for SiC devices across automotive and industrial applications as they transition to electrification and seek higher efficiency. Production is expected to start in…
STMicroelectronics simplifies SiC inverter designs
STMicroelectronics has released two STPOWER modules that contain 1200V silicon-carbide (SiC) MOSFETs in popular configurations. Each uses ST’s ACEPACK 2 package technology to ensure high power density and simplified assembly. The first of the new modules, the A2F12M12W2-F1, is a four-pack module that provides a convenient and compact full-bridge solution for circuits such as DC/DC converters. Another module,…
STMicroelectronics releases new silicon-carbide devices for EVs
STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs. ST’s new SiC devices are advancing the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria. ST has incorporated…
STMicroelectronics and IME partner on silicon carbide R&D for EV market
The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and STMicroelectronics, a global semiconductor provider, announced the start of a Research & Development (R&D) collaboration in the field of silicon carbide (SiC) for power-electronics applications in the automotive and industrial markets. The collaboration sets a foundation for a comprehensive SiC ecosystem…
STMicroelectronics manufactures first 200mm silicon-carbide wafers
STMicroelectronics, a global semiconductor provider, announced that it has manufactured the first 200mm (8-inch) silicon-carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden. The transition to 200mm SiC wafers marks an important milestone in the capacity build-up for ST’s customer programs in automotive and industrial sectors. It will further…