TSMC recently announced the opening of its Advanced Backend Fab 6, the company’s first all-in-one automated advanced packaging and testing fab to realize 3DFabric integration of front-end to back-end process and testing services. The fab is prepared for mass production of TSMC-SoIC (System on Integrated Chips) process technology. Advanced Backend Fab 6 enables TSMC to…
TSMC launches OIP 3DFabric Alliance
TSMC recently announced the Open Innovation Platform (OIP) 3DFabric Alliance at the 2022 Open Innovation Platform Ecosystem Forum. The new TSMC 3DFabric Alliance is TSMC’s sixth OIP Alliance and the first of its kind in the semiconductor industry that joins forces with partners to accelerate 3D IC ecosystem innovation and readiness — with a full…
Renesas unveils new-generation Si IGBTs for EV inverters
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next-generation electric vehicle (EVs) inverters, AE5-generation IGBTs will be mass produced starting in the first half…
Broadcom and Tencent partner on commercialization of co-packaged optics network switch
Broadcom Inc. and Tencent Holdings Ltd. have announced a strategic partnership to accelerate the adoption of high bandwidth co-packaged optics (CPO) network switches for cloud infrastructure. Under this partnership, Broadcom will provide the 25.6-Tbps Humboldt CPO switch device that features Broadcom’s best-in-class StrataXGS Tomahawk 4 switch chip directly coupled and co-packaged with four 3.2-Tbps Silicon Photonics Chiplets…
Renesas to demonstrate first working silicon based on the Arm Cortex-M85 processor
Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, announced that it will present the first live demonstration of a microcontroller (MCU) based on the recently announced Arm Cortex-M85 processor. The demonstration will take place in the Renesas booth – Hall 1, Stand 234 (1-234) at the Embedded World 2022 Exhibition and Conference in Nuremburg…
STMicroelectronics and MACOM announce successful RF GaN-on-Si prototypes
STMicroelectronics, a global semiconductor provider, and MACOM Technology Solutions Holdings, a supplier of semiconductor products for the telecommunications, industrial, defense, and datacenter industries, have announced the successful production of radio-frequency Gallium-Nitride-on Silicon (RF GaN-on-Si) prototypes. With this achievement, ST and MACOM will continue to work together and enhance our relationship. RF GaN-on-Silicon offers high potential for…
STMicroelectronics launches new MDmesh MOSFETs
STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction, multi-drain, silicon-power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions. The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has…
Vishay offers automotive-grade, silicon PIN photodiode in surface-mount package
The Optoelectronics group of Vishay Intertechnology has introduced a new automotive-grade, 4-quadrant silicon PIN photodiode in a standard surface-mount package. Enabling a variety of sensor and control applications for the automotive, consumer, and industrial markets, the Vishay Semiconductors K857PH combines high photo sensitivity with low 0.1 % crosstalk and virtually no tolerance between its segments. The…
TI GaN technology to support Delta Electronics’ power supplies
Texas Instruments (TI) has announced that its gallium-nitride (GaN) technology and C2000 real-time microcontrollers (MCUs) are being combined with Delta Electronics’ high-efficiency power electronics expertise in the design of an enterprise server power-supply unit (PSU). They feature an 80-percent improvement in power density with one percent better efficiency — up to 99.2 percent — for…
Infineon and Panasonic to advance technology for GaN-powered devices
Infineon Technologies and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium-nitride (GaN) technology, offering higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for…
STMicroelectronics extends silicon-carbide wafer supply agreement with Cree
Cree, Inc., the global provider in silicon-carbide technology through its Wolfspeed business, and STMicroelectronics, a global semiconductor provider, announced the expansion of an existing multi-year, long-term silicon-carbide wafer supply agreement. The amended agreement, which calls for Cree to supply ST with 150mm silicon-carbide bare and epitaxial wafers over the next several years, is now worth…
Nexperia to produce MOSFETs using its innovative NextPower silicon technology
Nexperia, an expert in essential semiconductors, announced that the first products to be made in the company’s new eight-inch wafer line in Manchester, UK, will be low RDS(on), low Qrr 80 V and 100 V MOSFETs — using its latest NextPower silicon technology. The new production line expands Nexperia’s capacity. Plus, the new PSMN3R9-100YSF (100…