Power semiconductors based on silicon carbide (SiC) offer several advantages like high efficiency, power density, voltage resistance, and reliability. This creates opportunities for new applications and improved charging station technology innovations. Infineon Technologies announced a collaboration with Infypower, a Chinese provider of new energy vehicle charging. Infineon will provide INFY with the industry-leading 1200 V…
Allegro offers high-efficiency isolated gate-driver IC
Allegro MicroSystems, a global provider in power and sensing solutions for motion control and energy-efficient systems, has announced the launch of its new Power-Thru isolated gate driver. This is the first product introduced in the company’s Power-Thru portfolio. Allegro’s new isolated gate driver creates a single-package solution that drives GaN FETs with up to a…
Infineon adds 650 V TOLL portfolio to its CoolSiC MOSFET family
As digitalization, urbanization, and the rise of electro-mobility continue to shape the rapidly evolving world, the demand for power consumption is reaching unprecedented levels. Acknowledging energy efficiency as an important concern, Infineon Technologies addresses these megatrends with its silicon carbide (SiC) CoolSiC MOSFET 650 V in TO leadless (TOLL) packaging. The new SiC MOSFETs are…
Airbus and STMicroelectronics collaborate on advancing aircraft electrification
Airbus, a global pioneer in the aerospace industry, and STMicroelectronics, a global semiconductor provider, have signed an agreement to cooperate on power electronics Research & Development to support more efficient and lighter power electronics, essential for future hybrid-powered aircraft and full-electric urban air vehicles. The collaboration builds on evaluations already conducted by both companies to explore…
New Microsoft MPLAB SiC Power Simulator evaluates SiC power devices
The electrification of everything is driving the growth of SiC semiconductors as large market segments such as E-Mobility, sustainability and industrial turn to SiC power solutions because of its fast-switching capabilities, lower power loss, and higher-temperature performance. To help power design engineers transition to SiC power solutions with ease, speed and confidence, Microchip Technology announces…
ZF relying on STMicroelectronics for silicon carbide devices
The technology group ZF will, from 2025, purchase silicon carbide devices from STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications. Under the terms of the multi-year contract, ST will supply a volume of double-digit millions of silicon carbide devices to be integrated into ZF’s new modular inverter architecture going into series production in…
Infineon teams with Infinitum to drive decarbonization
At APEC 2023, Infineon Technologies announced that the company is joining forces with Infinitum, creator of the sustainable, breakthrough air core motor. In this technology collaboration, Infineon will provide silicon-carbide (SiC) CoolSiC MOSFETs and other key semiconductor components that greatly contribute to the Infinitum motor system’s precise motor control, optimal power, and energy savings. The…
New gate driver IC supports high-voltage power devices
Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, announced a new gate driver IC, designed to drive high-voltage power devices such as Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU…
STMicroelectronics simplifies SiC inverter designs
STMicroelectronics has released two STPOWER modules that contain 1200V silicon-carbide (SiC) MOSFETs in popular configurations. Each uses ST’s ACEPACK 2 package technology to ensure high power density and simplified assembly. The first of the new modules, the A2F12M12W2-F1, is a four-pack module that provides a convenient and compact full-bridge solution for circuits such as DC/DC converters. Another module,…
Microchip unveils industry’s lowest on-resistance 3.3 kV silicon-carbide power devices
System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives, and energy infrastructure solutions require high-voltage switching technology to increase efficiency, reduce system size and weight. Microchip Technology has announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC…
Infineon releases new family of CoolSiC 650V silicon-carbide MOSFETs
Megatrends including digitalization, urbanization, and electromobility all equate to an increase in power consumption. At the same time, energy efficiency is more important than ever. Infineon Technologies is responding to these megatrends and related demands by offering a new family of CoolSiC 650 V silicon-carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top performance.…
New dual gate drivers simplify SiC and IGBT switching circuits
Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications. The STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs leverage ST’s latest galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on…
Microchip to support Mersen’s SiC Power Stack Reference Design
E-mobility and renewable energy systems require power-management solutions that drive performance and cost efficiencies while speeding up development time. To keep pace with these requirements, Microchip Technology announced its collaboration with Mersen on a 150 kilovolt-ampere (kVA), three-phase, silicon-carbide Power Stack Reference Design. Mersen is a global provider of power-management solutions for several industrial sectors,…
Microchip expands its gallium-nitride RF power portfolio
Microchip Technology Inc. recently announced a significant expansion of its gallium-nitride (GaN), radio-frequency (RF). power-device portfolio with new MMICs and discrete transistors that cover frequencies up to 20 gigahertz (GHz). The devices combine high power-added efficiency (PAE) and high linearity to deliver new levels of performance in applications — ranging from 5G to electronic warfare, satellite communications, commercial…
STMicroelectronics and IME partner on silicon carbide R&D for EV market
The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and STMicroelectronics, a global semiconductor provider, announced the start of a Research & Development (R&D) collaboration in the field of silicon carbide (SiC) for power-electronics applications in the automotive and industrial markets. The collaboration sets a foundation for a comprehensive SiC ecosystem…
STMicroelectronics offers new space-saving, isolated SiC gate driver
STMicroelectronics’ STGAP2SiCSN single-channel gate driver, optimized to control silicon-carbide MOSFETs, now comes in a space-saving, narrow-body SO-8 package and delivers reliable performance with accurate PWM control. As SiC technology becomes widely adopted to boost power-conversion efficiency, the STGAP2SiCSN simplifies design, saves space, and enhances robustness and reliability in energy-conscious power systems, drives, and controls. Applications include…
Microchip launches fully configurable, digital gate driver for silicon-carbide MOSFETs
As demand for electric buses and other electrified heavy transport vehicles increases to meet lower emission targets, silicon carbide-based power management solutions are providing greater efficiencies in these transportation systems. To complement its broad portfolio of silicon carbide MOSFET discrete and module products, Microchip Technology has announced a new 1200V production-ready digital gate driver —…
STMicroelectronics extends silicon-carbide wafer supply agreement with Cree
Cree, Inc., the global provider in silicon-carbide technology through its Wolfspeed business, and STMicroelectronics, a global semiconductor provider, announced the expansion of an existing multi-year, long-term silicon-carbide wafer supply agreement. The amended agreement, which calls for Cree to supply ST with 150mm silicon-carbide bare and epitaxial wafers over the next several years, is now worth…
Microchip offers 1700V silicon-carbide power solutions
Today’s energy-efficient electric charging systems powering commercial vehicle propulsion — as well as auxiliary power systems, solar inverters, solid-state transformers, and other transportation and industrial applications — all rely on high-voltage switching power devices. To best meet these requirements, Microchip Technology announced the expansion of its silicon-carbide portfolio with a family of high-efficiency, high-reliability 1700V…
STMicroelectronics manufactures first 200mm silicon-carbide wafers
STMicroelectronics, a global semiconductor provider, announced that it has manufactured the first 200mm (8-inch) silicon-carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden. The transition to 200mm SiC wafers marks an important milestone in the capacity build-up for ST’s customer programs in automotive and industrial sectors. It will further…