As digitalization, urbanization, and the rise of electro-mobility continue to shape the rapidly evolving world, the demand for power consumption is reaching unprecedented levels. Acknowledging energy efficiency as an important concern, Infineon Technologies addresses these megatrends with its silicon carbide (SiC) CoolSiC MOSFET 650 V in TO leadless (TOLL) packaging. The new SiC MOSFETs are…

As electrical engineers, we are always searching for new and innovative ways to optimize the performance of our devices. However, one often overlooked aspect of electronic design is the management of heat. Excessive heat can have disastrous effects on the performance, reliability, and longevity of electronic components. This is where Thermal Interface Materials (TIMs) come…

STMicroelectronics has extended its high-voltage wide-bandgap power-converter family by adding the VIPerGaN100 and VIPerGaN65 for single-switch quasi-resonant (QR) flyback converters up to 100 and 65W. The compact and highly integrated design targets switched-mode power supplies (SMPS) for USB-PD chargers, home appliances, smart-building controllers, lighting, air conditioning, smart metering, and other industrial applications. Each device integrates a pulse-width…

STMicroelectronics has released two STPOWER modules that contain 1200V silicon-carbide (SiC) MOSFETs in popular configurations. Each uses ST’s ACEPACK 2 package technology to ensure high power density and simplified assembly. The first of the new modules, the A2F12M12W2-F1, is a four-pack module that provides a convenient and compact full-bridge solution for circuits such as DC/DC converters. Another module,…

Samsung Electronics, a global provider in advanced memory technology, announced the 990 PRO, the company’s high-performance NVMe SSD based on PCIe 4.0. Delivering lightning-fast speeds and high-power efficiency, the new SSD is optimized for graphically demanding games and other intensive tasks — including 3D rendering, 4K video editing, and data analysis. “With continuing innovations in…

Diodes Incorporated has introduced a new transistor array. The DIODES ULN62003A consists of seven 500mA-rated open-drain transistors, where all their sources are connected to a common ground pin. Capable of driving a wide variety of loads — such as solenoids, relays, DC motors, and LED displays — this high-current transistor array is aimed at climate…

With the rising number of mobile devices, notebooks, and battery-powered equipment, the need for increased charging power and fast charging has emerged. For engineers, this trend poses the challenge of achieving ever-higher power levels in smaller form factors while simultaneously meeting thermal performance requirements. To address these contemporary design needs, Infineon Technologies combines the hybrid…

Nexperia, an expert in essential semiconductors, has released new, enhanced electrothermal models for its MOSFET devices. Semiconductor manufacturers commonly provide simulation models for their MOSFETs. But these typically only include a limited number of device parameters that have been modeled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete…

High-power density, optimized performance, and ease-of-use are key requirements when designing modern power systems. To offer practical solutions for design challenges in end applications, Infineon Technologies has launched a new generation of OptiMOS source-down (SD) power MOSFETs. These devices come in a PQFN 3.3 x 3.3 mm2 package and a wide voltage class ranging from…