STMicroelectronics, a global semiconductor provider serving customers across the spectrum of electronics applications, will build an integrated silicon-carbide (SiC) substrate manufacturing facility in Italy to support the increasing demand from ST’s customers for SiC devices across automotive and industrial applications as they transition to electrification and seek higher efficiency. Production is expected to start in…
STMicroelectronics extends silicon-carbide wafer supply agreement with Cree
Cree, Inc., the global provider in silicon-carbide technology through its Wolfspeed business, and STMicroelectronics, a global semiconductor provider, announced the expansion of an existing multi-year, long-term silicon-carbide wafer supply agreement. The amended agreement, which calls for Cree to supply ST with 150mm silicon-carbide bare and epitaxial wafers over the next several years, is now worth…
STMicroelectronics manufactures first 200mm silicon-carbide wafers
STMicroelectronics, a global semiconductor provider, announced that it has manufactured the first 200mm (8-inch) silicon-carbide (SiC) bulk wafers for prototyping next-generation power devices from its facility in Norrköping, Sweden. The transition to 200mm SiC wafers marks an important milestone in the capacity build-up for ST’s customer programs in automotive and industrial sectors. It will further…
Nexperia to produce MOSFETs using its innovative NextPower silicon technology
Nexperia, an expert in essential semiconductors, announced that the first products to be made in the company’s new eight-inch wafer line in Manchester, UK, will be low RDS(on), low Qrr 80 V and 100 V MOSFETs — using its latest NextPower silicon technology. The new production line expands Nexperia’s capacity. Plus, the new PSMN3R9-100YSF (100…