Taiwan Semiconductor introduces the new 40V PerFET (NH Series) power MOSFETs with a PDFN33 package.
The new MOSFETs are built on proprietary device structures and processes that enable exceptionally low on-state resistance and switching figure-of-merit (FOM – R*Q). The achievement of 35% FOM reduction, compared to previous technology (NB Series), puts this portfolio at the top of performance.
The value of RDS(on) at temperatures (-55° to 150° C) presents less variation due to a lower temperature coefficient (K). This initial 40V N-channel platform includes options for standard (10V) and logic level (5V) gate-drive requirements while preserving rugged safe-operating resistance to switching voltage transients and avalanche concerns in switching applications.
• Ultra‐low on‐resistance
• 100% UIS and Rg tested
• RoHS compliant
• Halogen‐free, according to IEC 61249‐2‐21
• DC‐DC converters
• Server and telecom
• Motor drivers
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Filed Under: Components, News, Semiconductors