Vishay offers two new n-channel MOSFETs that increase power density

Vishay Intertechnology, Inc. has introduced two new n-channel TrenchFET MOSFETs that increase power density, efficiency, and board-level reliability in telecom and industrial applications.

To achieve these design goals, the 60 V SiJH600E and 80 V SiJH800E combine ultra low on-resistance with high-temperature operation to +175° C and high continuous drain-current handling.

The space-saving PowerPAK 8x8L package promotes board-level reliability with its bond wireless construction and gullwing leads for mechanical stress relief.

The ultra low on-resistance of the SiJH600E and SiJH800E — 0.65 mΩ and 1.22 mΩ typical at 10 V, respectively — is 54 and 52 percent lower than same-generation devices in the PowerPAK SO-8. This translates into energy savings by minimizing power losses due to conduction.

For increased power density, the SiJH600E and SiJH800E deliver continuous drain current of 373 and 288 A, respectively, in a package that is 60 percent smaller and 57 percent thinner than the D²PAK.

To save board space, each MOSFET can also be used in place of two PowerPAK SO-8 devices in parallel.