Metal Oxide Semiconductor Field Effect Transistor is a voltage controlled semiconductor device that operates on the principle of controlled electron flow through a channel by varying the width of channel. The width of the channel is controlled by the voltage applied at the ‘Gate’ terminal which is separated from the channel between the other two terminals, ‘Source’ and ‘Drain’ by an insulating dielectric layer of metal oxide. These find widespread use in amplifying or rapidly switching electronic signals. MOSFETs may be of ‘Depletion Type’ where the channel already exists or ‘Enhancement Type’, where channel forms on applying Voltage across Gate.
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