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Winbond Brings-in A New Range Of High-Quality NAND Flashes – A Cost Effective Solution To NOR Flash For Code Safe-Keeping In Mission-Critical Applications

By Shreepanjali Mod March 13, 2018

One of the leading suppliers of semiconductor memory solutions, Winbond Electronics Corporation recently introduced a completely new class of NAND Flash ICs that promise long and high quality data retention much suitable for mission-critical code storage applications at a density of 512Mb and more. 
 
The new automotive-grade Single-Level Cell (SLC) HIgh Quality (HQ) serial NAND FLash parts will allow automotive system manufacturers to assign code storage in high level applications like autonomous driving systems that need larger storage capacity of 512Mb or more than that. This will allow them to carry out all operations at a much lower cost-per-bit as compared to conventional selection of NOR Flash offers. 
 
A much better option for code storage can be attained thanks to WInbond that recently started a new testing and production processes for eliminating small flaws that take place while conventional NAND Flash devices are operational. The team applied these processes at 46nm node rather than going for 1xnm as well as 2xnm nodes that are to be used by makers of high-density consumer NAND Flash. It ensures presence of much higher electron count-per-cell which then extends data retention time. Such approaches ensure that reliability of HQ NAND Flash sync well with that of equivalent NOR Flash devices present in market these days. 
 
The Director of Flash Marketing of Winbond Electronics, Syed S. Hussain, adds that, “Because of the inability of NOR Flash to scale below 45nm, the high cost-per-bit of NOR for code storage is built into the bill-of-materials cost – there is no prospect of it falling as demand for higher densities rises. Winbond has solved this problem by enabling the use of NAND Flash instead, at less than half the cost-per-bit of 45nm NOR Flash today and with a clear route to an even better cost-per-bit at the next 3xnm node.” 
 

Filed Under: News

 

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