Samsung Electronics announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology. It has also successfully completed the product evaluation for compatibility with AMD. “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, executive VP of DRAM Product…
Vishay’s new resonant transformer with integrated inductor simplifies PCB layouts
Vishay Intertechnology has introduced a new resonant transformer for inductor-inductor-capacitor (LLC) applications that feature the transformer and an integrated inductor in a single package. Designed to save PCB space while simplifying layouts and reducing component mounting requirements, the 5.5 kW Vishay Custom Magnetics MRTI5R5EZ offers fully tunable magnetizing and leakage inductance with minimal parasitic variation. The…
STMicroelectronics launches new RF LDMOS power transistors
STMicroelectronics is adding a broad range of new devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimized for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, STPOWER LDMOS devices combine a short conduction-channel…