ON Semiconductor launches new SiC MOSFET devices for demanding applications

ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications where power density, efficiency, and reliability are key considerations. By replacing existing silicon switching technologies with the new SiC devices, designers will achieve significantly better performance in applications, such as electric vehicles (EV) on-board chargers (OBC), solarinverters, server power-supply units (PSU), telecoms, and uninterruptible power supplies (UPS).

ON Semiconductor’s new automotive AECQ101 and industrial-grade qualified 650 volts (V) SiC MOSFETs are based upon a new, wide band-gap material that provides superior switching performance and improved thermals when compared to silicon. This results in improved efficiency at the system level, enhanced power density, and reduced electromagnetic interference (EMI), system size, and weight.

The new generation of SiC MOSFETs employs a novel active cell design combined with advanced thin wafer technology enabling best-in-class figure of merit Rsp (Rdson*area) for 650 V breakdown voltage.

“In modern power applications such as on-board chargers (OBC) for EV and other applications including renewable energy, enterprise computing, and telecom, efficiency, reliability, and power density are constant challenges for designers,” said Asif Jakwani, senior VP of the Advanced Power Division at ON Semiconductor. “These new SiC MOSFETs significantly improve performance over the equivalent silicon switching technologies, allowing engineers to meet these challenging design goals.”

The NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1, and NTH4L015N065SC1 offer the lowest Rdson (12 mOhm) in the market in D2PAK7L and To247 packages. This technology is also optimized around energy loss figure-of-merits, optimizing performance in automotive and industrial applications.

An internal gate resistor (Rg) allows more flexibility to designers eliminating the need to slow down devices artificially with external gate resistors. Higher surge, avalanche capability, and short circuit robustness all contribute to enhanced ruggedness that delivers higher reliability and longer device lifetimes.

“The enhanced performance delivers lower losses that enhance efficiency and reduce thermal management needs, as well as reducing EMI,” added Jakwani. “The end result of using these new SiC MOSFETs is a smaller, lighter, more efficient, and more reliable power solution.”