Fujitsu Limited and Fujitsu Laboratories Ltd. collectively introduced a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.

 

The newly developed power amplifier will be used in W-band transmissions offering both high output and high efficiency. It will also deliver an improved transistor performance through the reduction of electrical current leakage and internal GaN-HEMT resistance.

 

Fujitsu has achieved 4.5 watts per millimeter of gate width which is the world’s highest output density in the W-band. It has also confirmed a 26% reduction in the energy consumption as compared to the conventional technology.

 

 

 

To increase the distance as well as the capacity of wireless communications and decrease energy consumption with indium-aluminum-gallium-nitride (InAIGaN) HEMTs, Fujitsu has come up with two technologies. These have the following features:

 

• The new device technology can reduce the resistance to one tenth that of previous technology when current flows between the source or drain electrodes and the GaN-HEMT device.

 

• It maintains high drain currents by effectively distributing indium-gallium-nitride (InGaN) to create a barrier layer below the channel layer. This not only reduces electron detours during operation but also brings a reduction in current leakage. 

Fujitsu is the leading Japanese information and communication technology (ICT) company offering a full range of technology products, solutions, and services. Approximately 155,000 Fujitsu people support customers in more than 100 countries.