Fujitsu Limited and Fujitsu Laboratories Ltd. collectively introduced a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
The newly developed power amplifier will be used in W-band transmissions offering both high output and high efficiency. It will also deliver an improved transistor performance through the reduction of electrical current leakage and internal GaN-HEMT resistance.
Fujitsu has achieved 4.5 watts per millimeter of gate width which is the world’s highest output density in the W-band. It has also confirmed a 26% reduction in the energy consumption as compared to the conventional technology.
GaN-HEMT power amplifier performance (Image Courtesy: Fujitsu)
The widespread use of 5G and IoT devices has led to an increased wireless data traffic and it’s further going to increase at an annual growth rate of 1.5 times by the year 2020. So in order to build this kind of high-capacity next-gen wireless network, the focus is being laid upon high-frequency W-band.
To increase the distance as well as the capacity of wireless communications and decrease energy consumption with indium-aluminum-gallium-nitride (InAIGaN) HEMTs, Fujitsu has come up with two technologies. These have the following features:
• The new device technology can reduce the resistance to one tenth that of previous technology when current flows between the source or drain electrodes and the GaN-HEMT device.
• It maintains high drain currents by effectively distributing indium-gallium-nitride (InGaN) to create a barrier layer below the channel layer. This not only reduces electron detours during operation but also brings a reduction in current leakage.
Fujitsu is the leading Japanese information and communication technology (ICT) company offering a full range of technology products, solutions, and services. Approximately 155,000 Fujitsu people support customers in more than 100 countries.
Filed Under: News