Alliance Memory has unveiled a new 1 Gb high-speed CMOS double data rate synchronous DRAM in the 66-pin TSOP II package. The AS4C128M8D1-6TIN operates in the industrial temperature range of -40°C to +85°C and carries a rare internal configuration of 4 banks of 32M word x bits. 

 

It also features a clock frequency of up to 166 MHz for fast data transfer rates, reliable drop-in and pin-to-pin compatible replacement for a number of solutions. It’s ideally suited for industrial, medical, communications and military solutions involving high memory bandwidth. Further, the SDRAM operates from a single +2.5V (±0.2V) power supply, equipped with a power-down mode to lower power consumption, and offers a data mask for write control.

 

 

The AS4C128M8D1-6TIN supports sequential and interleave burst types with read or write burst lengths of 2, 4, or 8. Owing to the device’s four banks operated in an interleaved fashion, random access operation occurs at a higher rate as compared to the standard DRAMs. Besides, a sequential and gapless data rate is possible depending on burst length, CAS latency, and speed grade. 

Moreover, there is an auto pre-charge function that provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.

 

 

Alliance Memory is a worldwide provider of critical and hard-to-find DRAM and SRAM memory ICs for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company’s product range includes DRAMs and SRAMs with commercial, industrial, and automotive operating temperature ranges and densities from 64Kb to 8Gb.