New STPOWER MOSFETs minimize switching power losses

The new super-junction STPOWER MDmesh K6 series enhances several key parameters to minimize system-power losses. It’s suited to lighting applications based on flyback topology, such as LED drivers, HID lamps, adapters, and power supplies for flat-panel displays.

With the 800V STPOWER MDmesh K6 series, STMicroelectronics is setting the benchmark for this super-junction technology, combining best-in-class performance with ease of use. MDmesh K6, with the top RDS(on) x area at 800V currently available in the market, allows compact new designs that combine high power density with efficiency.

In addition, the K6 series has a reduced threshold voltage compared with the previous MDmesh K5 generation, enabling a lower driving voltage, reducing power losses, and gaining efficiency mainly for zero-watt standby applications.

The total gate charge (Qg) is also very low, permitting high switching speeds and low losses.

An integrated ESD protection diode increases the overall ruggedness of the MOSFET up to Human Body Model (HBM) Class 2.

“We have tested and evaluated samples of the new Super Junction Very High Voltage MDmesh K6 series and have noted and been very impressed with the outstanding Rdson*area and Total Gate charge (Qg) performance characteristics,” said Luca Colombo, CTO and R&D manager, TCI, an Italian solid-state lighting innovator (learn more at TCI).