Vishay's new power MOSFETs offer high efficiency for datacenter applications

Vishay Intertechnology has introduced the latest device in its fourth-generation 600 V E Series power MOSFETs. Providing high efficiency for telecom, server, and datacenter power-supply applications, the Vishay Siliconix n-channel SiHK045N60E slashes on-resistance by 27 percent compared with previous-generation 600 V E Series MOSFETs — while delivering 60 percent lower gate charge.

This results in the industry’s lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600 V MOSFETs used in power-conversion applications.

Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems.

With the SiHK045N60E and upcoming devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in the first stages of the power-system architecture, including power-factor correction and hard-switched AC/DC converter topologies.

Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHK045N60E features low typical on-resistance of 0.043 Ω at 10 V and ultra-low gate charge down to 65 nC. The device’s FOM of 2.8 Ω*nC is 3.4 percent lower than the closest competing MOSFET in the same class.

For improved switching performance, the SiHK045N60E provides low effective output capacitance C_o(er) of 117 pF. These values translate into reduced conduction and switching losses to save energy. The SiHK045N60E’s thermal resistance R_thJC of 0.45° C/W is 11.8 percent lower than the closest competing device, providing a higher thermal capability.

Offered in the PowerPAK 10×12 package, the device is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 percent UIS testing.